IXTQ 26N50P V = 500 V TM DSS PolarHV IXTT 26N50P I =26 A D25 Power MOSFET IXTV 26N50P R 230 m DS(on) IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 500 V DSS J D S D (TAB) V T = 25 C to 150 C R = 1 M 500 V DGR J GS TO-268 (IXTT) V Continuos 30 V GSS V Transient 40 V GSM I T = 25C26A D25 C G S I T = 25 C, pulse width limited by T 78 A D (TAB) DM C JM I T = 25C26A AR C PLUS220 (IXTV) E T = 25C40mJ AR C E T = 25 C 1.0 J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS G T 150C, R = 4 J G D D (TAB) S P T = 25 C 400 W D C T -55 ... +150 C J PLUS220SMD (IXTV S) T 150 C JM T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD G M Mounting torque (TO-3P) 1.13/10 Nm/lb.in. d S D (TAB) Weight TO-3P 6 g G = Gate D = Drain TO-268 5.5 g S = Source TAB = Drain PLUS220 & PLUS220SMD 5 g Features Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J l International standard packages BV V = 0 V, I = 250 A 500 V l DSS GS D Unclamped Inductive Switching (UIS) rated V V = V , I = 250A 3.0 5.5 V l GS(th) DS GS D Low package inductance - easy to drive and to protect I V = 30 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS Advantages V = 0 V T = 125 C 250 A GS J l R V = 10 V, I = 0.5 I 230 m Easy to mount DS(on) GS D D25 l Pulse test, t 300 s, duty cycle d 2 % Space savings l High power density DS99206E(12/05) 2006 IXYS All rights reservedIXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 24 31 S fs DS D D25 C 3600 pF iss C V = 0 V, V = 25 V, f = 1 MHz 380 pF oss GS DS C 48 pF rss t 20 ns d(on) t V = 10 V, V = 0.5 I 25 ns r GS DS D25 t R = 4 (External) 58 ns d(off) G t 20 ns f Q 65 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 Q 20 nC gd R 0.31 C/W thJC R 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 26 A S GS I Repetitive 104 A SM PLUS220 (IXTV) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25A, -di/dt = 100 A/s 300 ns rr F Q V = 100V, V = 0 V 3.3 C RM R GS PLUS220SMD (IXTV S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2