TM PolarP IXTA26P20P V = - 200V DSS IXTP26P20P I = - 26A Power MOSFETs D25 IXTQ26P20P R 170m DS(on) P-Channel Enhancement Mode IXTH26P20P Avalanche Rated TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S G S D D (Tab) S D (Tab) D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25C to 150C - 200 V DSS J V T = 25C to 150C, R = 1M - 200 V DGR J GS V Continuous 20 V GSS G V Transient 30 V GSM D S D (Tab) I T = 25C - 26 A D25 C I T = 25C, Pulse Width Limited by T - 70 A DM C JM G = Gate D = Drain I T = 25C - 26 A S = Source Tab = Drain A C E T = 25C 1.5 J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J Features P T = 25C 300 W D C z International Standard Packages T - 55 ... +150 C J z Avalanche Rated T 150 C JM z TM Rugged PolarP Process T - 55 ... +150 C stg z Low Package Inductance T 1.6mm (0.062 in.) from Case for 10s 300 C z L Fast Intrinsic Diode T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-3P,TO-220 &TO-247) 1.13/10 Nm/lb.in. d Advantages Weight TO-263 2.5 g TO-220 3.0 g z Easy to Mount TO-3P 5.5 g z Space Savings TO-247 6.0 g z High Power Density Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z High-Side Switches BV V = 0V, I = - 250A - 200 V z DSS GS D Push Pull Amplifiers z DC Choppers V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D z Automatic Test Equipment I V = 20V, V = 0V 100 nA z GSS GS DS Current Regulators I V = V V = 0V - 10 A DSS DS DSS, GS T = 125C -150 A J R V = -10V, I = 0.5 I , Note 1 170 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS99913D(01/13)IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 10 17 S fs DS D D25 C 2740 pF iss C V = 0V, V = -25V, f = 1MHz 540 pF oss GS DS C 100 pF rss t 18 ns d(on) Resistive Switching Times t 33 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 46 ns d(off) R = 3.3 (External) G t 21 ns f Q 56 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 Q 20 nC gd R 0.42 C/W thJC R (TO-3P & TO-247) 0.21 C/W thCS (TO-220) 0.50 C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = - 200V, I = - 0.8A, T = 70C, Tp = 5s 160 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 26 A S GS I Repetitive, Pulse Width Limited by T - 104 A SM JM V I = -13A, V = 0V, Note 1 - 3.2 V SD F GS t 240 ns rr I = -13A, -di/dt = -100A/s F Q 2.2 C RM V = -100V, V = 0V R GS I -18.0 A RM Note 1. Pulse Test, t 300s Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537