The IXTQ30N60L2 is a part manufactured by IXYS Corporation. It is a silicon insulated gate bipolar transistor (IGBT) that is rated for a 600V gate-emitter voltage, 30A collector current, and 60W continuous collector power dissipation. It is designed to be used in high-speed switching circuits, power supplies, motor control, and other similar applications. The IXTQ30N60L2 features a large gate oxide area and low on-state voltage, providing very low switching losses. Additionally, the device has good dV/dt immunity, fast switching, and thermal stability.