TM IXTH 30N60P V = 600 V PolarHV DSS I =30 A IXTQ 30N60P D25 Power MOSFET IXTT 30N60P R 240 m DS(on) N-Channel Enhancement Mode IXTV 30N60P Avalanche Rated IXTV 30N60PS Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C R = 1 M 600 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D (TAB) D I T = 25C30A S D25 C I T = 25 C, pulse width limited by T 80 A DM C JM TO-3P (IXTQ) I T = 25C30A AR C E T = 25C50mJ AR C E T = 25 C 1.5 J AS C G dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS D D (TAB) S T 150C, R = 4 J G P T = 25 C 540 W TO-268 (IXTT) D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C G stg S T 1.6 mm (0.062 in.) from case for 10 s 300 C L D (TAB) T Plastic body for 10 s 260 C SOLD PLUS220 (IXTV) M Mounting torque (TO-3P, TO-247) 1.13/10 Nm/lb.in. d F Mounting force (PLUS220) 11..65/2.5..15 N/lb. C Weight TO-247 6.0 g G TO-3P 5.5 g D D (TAB) PLUS220 4.0 g S TO-268 5.0 g PLUS220 (IXTV...S) Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J G D (TAB) BV V = 0 V, I = 250 A 600 V S DSS GS D G = Gate D = Drain V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D S = Source TAB = Drain I V = 30 V, V = 0 100 nA Features GSS GS DS l Fast Recovery diode I V = V 25 A DSS DS DSS l Unclamped Inductive Switching (UIS) V = 0 V T = 125 C 250 A GS J rated l International standard packages R V = 10 V, I = 0.5 I 240 m DS(on) GS D D25 l Low package inductance Pulse test, t 300 s, duty cycle d 2 % - easy to drive and to protect DS99251E(12/05) 2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 22 25 S fs DS D D25 C 5050 pF iss C V = 0 V, V = 25 V, f = 1 MHz 540 pF oss GS DS C 53 pF rss t 29 ns d(on) t V = 10 V, V = 0.5 I 20 ns r GS DS D25 t R = 4 (External) 80 ns d(off) G t 25 ns f Q 82 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 28 nC gs GS DS DSS D D25 Q 30 nC gd R 0.23 C/W thJC R 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 30 A S GS I Repetitive 80 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25A, -di/dt = 100 A/s 500 ns rr F Q V = 100V 4.0 C RM R Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics 25C 25C 30 60 V = 10V V = 10V GS 55 GS 27 8V 8V 50 24 7V 7V 45 21 6.5V 40 6.5V 18 35 15 30 6V 25 12 6V 20 9 15 5.5V 6 10 5.5V 3 5V 5 5V 0 0 01 23 45 67 8 0 3 6 9 12 15 18 21 24 27 30 V - Volts V - Volts D S D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 I - Amperes D I - Amperes D