X-On Electronics has gained recognition as a prominent supplier of IXTQ36N50P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTQ36N50P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTQ36N50P IXYS

IXTQ36N50P electronic component of IXYS
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See Product Specifications
Part No.IXTQ36N50P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 36.0 Amps 500 V 0.17 Ohm Rds
Datasheet: IXTQ36N50P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.338 ea
Line Total: USD 16.34 
Availability - 289
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
289
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 16.338
2 : USD 11.676
5 : USD 11.032

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTQ36N50P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTQ36N50P and other electronic components in the MOSFETs category and beyond.

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TM IXTH 36N50P V = 500 V PolarHV DSS IXTQ 36N50P I = 36 A Power MOSFET D25 IXTT 36N50P R 170 m DS(on) IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J G V T = 25 C to 150 C R = 1 M 500 V DGR J GS (TAB) D S V Continuous 30 V GS V Transient 40 V GSM TO-247 (IXTH) I T = 25C36A D25 C I T = 25 C, pulse width limited by T 108 A DM C JM I T = 25C36A (TAB) AR C E T = 25C50mJ AR C E T = 25 C 1.5 J AS C TO-268 (IXTT) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150 C, R = 3 J G P T = 25 C 540 W D C G T -55 ... +150 C J S D (TAB) T 150 C JM T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L PLUS220 (IXTV) T Plastic body for 10 s 260 C SOLD M Mounting torque(TO-247) 1.13/10 Nm/lb.in. d F Mounting force (PLUS220) 20..120/4.5..15 N/lb C G D (TAB) D Weight TO-247 6 g S TO-268 5 g PLUS220 2 g PLUS220 SMD(IXTV..S) TO-3P 5.5 g Symbol Test Conditions Characteristic Values G (T = 25 C unless otherwise specified) Min. Typ. Max. J S D (TAB) V V = 0 V, I = 250 A 500 V DSS GS D G = Gate D = Drain S = Source TAB = Drain V V = V , I = 250 A 3.0 5.0 V GS(th) DS GS D I V = 30 V , V = 0 100 nA GSS GS DC DS Features l International standard packages I V = V 25 A DSS DS DSS l Unclamped Inductive Switching (UIS) V = 0 V T = 125 C 250 A GS J rated l R V = 10 V, I = 0.5 I 170 m Low package inductance DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % - easy to drive and to protect DS99228E(01/06) 2006 IXYS All rights reservedIXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV36N50P IXTV 36N50PS Symbol Test Conditions Characteristic Values (T = 25 C unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 23 36 S fs DS D D25 C 5500 pF iss C V = 0 V, V = 25 V, f = 1 MHz 510 pF oss GS DS C 40 pF rss t 25 ns d(on) t V = 10 V, V = 0.5 V , I = I 27 ns r GS DS DSS D D25 t R = 3 (External) 75 ns d(off) G t 21 ns f Q 85 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 31 nC gd R 0.23 C/W thJC R (TO-247 and TO-3P) 0.21 C/W thCS (PLUS220) 0.21 C/W Source-Drain Diode Characteristic Values (T = 25 C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 36 A S GS I Repetitive 108 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 400 ns rr F V = 100 V, V = 0 V R GS Characteristic Curves Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics 25C 25C 36 80 V = 10V V = 10V GS GS 32 70 8V 8V 7V 28 7V 60 24 50 6.5V 6V 20 40 16 6V 30 12 5.5V 20 8 5.5V 10 4 5V 5V 0 0 0 123 456 7 0 2 4 6 8 10 12141618 202224 V - Volts V - Volts D S D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 I - Amperes D I - Amperes D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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