TM PolarP IXTA36P15P V = - 150V DSS IXTP36P15P I = - 36A Power MOSFETs D25 IXTQ36P15P R 110m DS(on) P-Channel Enhancement Mode IXTH36P15P Avalanche Rated TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S G S D D (Tab) S D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 150 V DSS J V T = 25C to 150C, R = 1M - 150 V DGR J GS V Continuous 20 V GSS G V Transient 30 V D GSM S D (Tab) I T = 25C - 36 A D25 C I T = 25C, Pulse Width Limited by T - 90 A G = Gate D = Drain DM C JM S = Source Tab = Drain I T = 25C - 36 A A C E T = 25C 1.5 J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J Features P T = 25C 300 W D C z T -55 ... +150 C International Standard Packages J T 150 C z TM JM Rugged PolarP Process T -55 ... +150 C z stg Avalanche Rated z Low Package Inductance T 1.6mm (0.062 in.) from Case for 10s 300 C L z T Plastic Body for 10s 260 C Fast Intrinsic Diode SOLD z Dynamic dv/dt Rated M Mounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.in. d z Low R and Q DS(ON) G F Mounting Force (TO-263) 10..65/2.2..14.6 N/lb. C z Low Drain-to-Tab Capacitance Weight TO-263 2.5 g TO-220 3.0 g Advantages TO-3P 5.5 g TO-247 6.0 g z Easy to Mount z Space Savings z Symbol Test Conditions Characteristic Values High Power Density (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250 A - 150 V DSS GS D z V V = V , I = - 250A - 2.5 - 4.5 V High-Side Switching GS(th) DS GS D z Push Pull Amplifiers I V = 20V, V = 0V 100 nA GSS GS DS z DC Choppers z I V = V , V = 0V -10 A Automatic Test Equipment DSS DS DSS GS z T = 125C - 250 A Current Regulators J R V = -10V, I = 0.5 I , Note 1 110 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS99791D(01/13)IXTA36P15P IXTP36P15P IXTQ36P15P IXTH36P15P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 11 19 S fs DS D D25 C 3100 pF iss C V = 0V, V = - 25V, f = 1MHz 610 pF oss GS DS C 100 pF rss t 21 ns d(on) Resistive Switching Times t 31 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 36 ns d(off) R = 3.3 (External) G t 15 ns f Q 55 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 20 nC gs GS DS DSS D D25 Q 18 nC gd R 0.42 C/W thJC R (TO-3P, TO-247) 0.21 C/W thCS (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 36 A S GS I Repetitive, Pulse Width Limited by T -140 A SM JM V I = -18A, V = 0V, Note 1 - 3.3 V SD F GS t 228 ns rr I = -18A, -di/dt = -100A/s F Q 2.0 C RM V = - 75V, V = 0V I R GS -17.6 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537