Preliminary Technical Information TM PolarP2 V = 500V IXTQ480P2 DSS I = 52A Power MOSFET D25 R 120m DS(on) t = 400ns N-Channel Enhancement Mode rr(typ) Avalanche Rated Fast Intrinsic Diode TO-3P Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS G D V Continuous 30 V GSS S Tab V Transient 40 V GSM I T = 25 C52A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 150 A DM C JM S = Source Tab = Drain I T = 25 C52A A C E T = 25 C 1.5 J AS C dv/dt I I , V V ,T 150 C 10 V/ns S DM DD DSS J P T = 25 C 960 W D C Features T -55 ... +150 C J T 150 C Avalanche Rated JM T -55 ... +150 C Fast Intrinsic Diode stg Dynamic dv/dt Rated T Maximum Lead Temperature for Soldering 300 C L Low Package Inductance T Plastic Body for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in. d Advantages Weight 5.5 g High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values Switch-Mode and Resonant-Mode (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Supplies BV V = 0V, I = 250A 500 V DC-DC Converters DSS GS D Laser Drivers V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D AC and DC Motor Drives I V = 30V, V = 0V 100 nA Robotics and Servo Controls GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS T = 125C 50 A J R V = 10V, I = 0.5 I , Note 1 120 m DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS100249A(4/16)IXTQ480P2 Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 30 48 S fs DS D D25 C 6800 pF iss C V = 0V, V = 25V, f = 1MHz 680 pF oss GS DS C 44 pF rss t 22 ns d(on) Resistive Switching Times t 11 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 40 ns d(off) R = 1 (External) G t 8 ns f Q 108 nC g(on) Pins: 1 - Gate 2 - Drain Q V = 10V, V = 0.5 V , I = 0.5 I 37 nC 3 - Source 4 - Drain gs GS DS DSS D D25 Q 38 nC gd R 0.13 C/W thJC R 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 52 A S GS I Repetitive, Pulse Width Limited by T 204 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 400 ns I = 26A, -di/dt = 100A/ s rr F V = 100V, V = 0V R GS Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537