TM V = 200V IXTA50N20P PolarHT DSS I = 50A IXTP50N20P Power MOSFET D25 R 60m IXTQ50N20P DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 200 V DSS J G S V T = 25C to 175C, R = 1M 200 V DGR J GS (TAB) V Continuous 20 V GSS V Transient 30 V GSM TO-220 (IXTP) T = 25C 50 A I D25 C I T = 25C, pulse width limited by T 120 A DM C JM I T = 25C 50 A A C G (TAB) E T = 25C1J D AS C S dV/dt I I , V V , T 175C 10 V/ns S DM DD DSS J P T = 25C 360 W D C TO-3P (IXTQ) T - 55 ... +175 C J T 175 C JM T - 55 ... +175 C stg T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10s 260 C SOLD G M Mounting torque (TO-3P,TO-220) 1.13/10 Nm/lb.in. d D (TAB) S Weight TO-263 2.5 g TO-220 3.0 g TO-3P 5.5 g G = Gate D = Drain S = Source TAB = Drain Features Symbol Test Conditions Characteristic Values International standard packages (T = 25C, unless otherwise specified) Min. Typ. Max. J Unclamped Inductive Switching (UIS) BV V = 0V, I = 250A 200 V rated DSS GS D Low package inductance V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D - easy to drive and to protect I V = 20V, V = 0V 100 nA GSS GS DS I V = V 25 A DSS DS DSS Advantages V = 0V T = 150C 250 A GS J Easy to mount R V = 10V, I = 0.5 I , Note 1 60 m DS(on) GS D D25 Space savings High power density 2008 IXYS CORPORATION, All rights reserved DS99156F(07/08) IXTA50N20P IXTP50N20P IXTQ50N20P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 12 23 S fs DS D D25 C 2720 pF iss C V = 0V, V = 25V, f = 1MHz 490 pF oss GS DS C 105 pF rss t 26 ns d(on) Resistive Switching Times t 35 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 70 ns d(off) R = 10 (External) G t 30 ns f Q 70 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 17 nC gs GS DS DSS D D25 Q 37 nC gd R 0.42 C/W thJC R (TO-3P) 0.21 C/W thCS (TO-220) 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J I V = 0V 50 A TO-220 (IXTP) Outline S GS I Repetitive, pulse width limited by T 120 A SM JM V I = 50A, V = 0V, Note 1 1.5 V SD F GS I = 25A, -di/dt = 100A/s t 150 ns F rr V = 100V, V = 0V Q 2.0 C R GS RM Note 1: Pulse test, t 300s duty cycle, d 2%. TO-263 (IXTA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537