TM V = 300V IXTT52N30P Polar DSS I = 52A IXTQ52N30P D25 Power MOSFETs R 73m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) V T = 25 C to 150 C 300 V DSS J V T = 25 C to 150 C, R = 1M 300 V DGR J GS V Continuous 20 V GSS G V Transient 30 V D GSM S I T = 25 C 52 A D (Tab) D25 C I T = 25 C, Pulse Width Limited by T 150 A DM C JM G = Gate D = Drain I T = 25 C52 A A C S = Source Tab = Drain E T = 25 C1 J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25 C 400 W D C Features T -55 ... +150 C J T 150 C JM Fast Intrinsic Rectifier T -55 ... +150 C Avalanche Rated stg Low R and Q DS(ON) G T Maximum Lead Temperature for Soldering 300 C L Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages M Mounting Torque (TO-3P) 1.13 / 10 Nm/lb.in d Weight TO-286 4.0 g High Power Density TO-3P 5.5 g Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Switch-Mode and Resonant-Mode J Power Supplies BV V = 0V, I = 250A 300 V DSS GS D DC-DC Converters Laser Drivers V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D AC and DC Motor Drives I V = 20V, V = 0V 100 nA Robotics and Servo Controls GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 250 A J R V = 10V, I = 0.5 I , Note 1 73 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS99115F(9/13)IXTT52N30P IXTQ52N30P Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 20 30 S fs DS D D25 C 3490 pF iss C V = 0V, V = 25V, f = 1MHz 550 pF oss GS DS C 130 pF rss t 24 ns d(on) Resistive Switching Times t 22 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 4 (External) G t 20 ns 1 - GATE f 2,4 - DRAIN 3 - SOURCE Q 110 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 25 nC gs GS DS DSS D D25 Q 53 nC gd R 0.31 C/W thJC R TO-3P 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 52 A S GS I Repetitive, Pulse Width Limited by T 150 A SM JM V I = I , V = 0V, Note 1 1.5 V TO-3P Outline SD F S GS t 250 ns I = 25A, -di/dt = 100A/ s rr F V = 100V, V = 0V Q 3.0 C R GS RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. 1 - GATE 2,4 - DRAIN 3 - SOURCE IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537