TM Polar V = 300V IXTT69N30P DSS Power MOSFET I = 69A IXTQ69N30P D25 R 49m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S V T = 25C to 150C 300 V Tab DSS J V T = 25C to 150C, R = 1M 300 V DGR J GS TO-3P (IXTQ) V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 69 A D25 C G I T = 25C, Pulse Width Limited by T 200 A D DM C JM S I T = 25C 69 A Tab A C E T = 25C 1.5 J AS C G = Gate D = Drain dv/dt I < I , V < V , T < 150C 15 V/ns S DM DD DSS J S = Source Tab = Drain P T = 25C 500 W D C T -55 to +150 C J T +150 C JM T -55 to +150 C stg Features T 1.6mm (0.063in) from Case for 10s 300 C L z International Standard Packages T Plastic Body for 10s 260 C SOLD z Fast Intrinsic Diode M Mounting Torque (TO-3P) 1.13/10 Nm/lb.in. z d Avalanche Rated z Weight TO-268 4.0 g Low R and Q DS(ON) G z TO-3P 5.5 g Low Package Inductance Advantages z High Power Density Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Space Savings BV V = 0V, I = 250A 300 V DSS GS D Applications V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D z I V = 20V, V = 0V 100 nA DC-DC Coverters GSS GS DS z Battery Chargers I V = V , V = 0V 5 A DSS DS DSS GS z Switch-Mode and Resonant-Mode T = 125C 100 A J Power Supplies R V = 10V, I = 0.5 I , Note 1 49 m z DS(on) GS D D25 DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications 2009 IXYS CORPORATION, All Rights Reserved DS99078F(10/09) IXTQ69N30P IXTT69N30P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 30 48 S fs DS D D25 C 4960 nF iss C V = 0V, V = 25V, f = 1MHz 760 pF oss GS DS C 190 pF rss t 25 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = I GS DS DSS D D25 t 75 ns d(off) R = 4 (External) G t 27 ns f Q 156 180 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 32 nC gs GS DS DSS D D25 Q 79 nC gd R 0.25 C/W thJC R TO-3P 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 69 A S GS TO-268 (IXTT) Outline I Repetitive, Pulse Width Limited by T 270 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 25A, -di/dt = 100A/s, t 330 ns F rr V = 100V, V = 0V Q R 4.13 GS C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537