TM V = - 600V IXTR16P60P PolarP DSS I = - 10A Power MOSFET D25 R 790m DS(on) P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 600 V DSS J V T = 25C to 150C, R = 1M - 600 V DGR J GS G Isolated Tab D V Continuous 20 V GSS S V Transient 30 V GSM G = Gate D = Drain I T = 25C - 10 A D25 C S = Source I T = 25C, Pulse Width Limited by T - 48 A DM C JM I T = 25C - 16 A A C E T = 25C 2.5 J AS C Features dV/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 190 W z D C Silicon Chip on Direct-Copper Bond (DCB) Substrate T -55 ... +150 C J z Isolated Mounting Surface T 150 C JM z 2500V~ Electrical Isolation T -55 ... +150 C stg z Avalanche Rated T 1.6mm (0.062 in.) from Case for 10s 300 C z L Fast Intrinsic Rectifier T Plastic Body for 10s 260 C SOLD z Low R and Q DS(ON) G V 50/60 Hz, 1 Minute 2500 V~ ISOL F Mounting Force 20..120/4.5..27 N/lb. C Advantages Weight 5 g z Easy to Mount z Space Savings z High Power Density Applications Symbol Test Conditions Characteristic Values z High-Side Switches (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Push-Pull Amplifiers BV V = 0V, I = - 250A - 600 V z DSS GS D DC Choppers z Automatic Test Equipment V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D z Load-Switch Applications I V = 20V, V = 0V 100 nA z GSS GS DS Fuel Injection Systems I V = V , V = 0V - 25 A DSS DS DSS GS T = 125C - 200 A J R V = -10V, I = - 8A, Note 1 790 m DS(on) GS D 2013 IXYS CORPORATION, All Rights Reserved DS99989B(01/13) IXTR16P60P Symbol Test Conditions Characteristic Values ISOPLUS247 (IXTR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 8A, Note 1 11 18 S fs DS D C 5120 pF iss C V = 0V, V = - 25V, f = 1MHz 445 pF oss GS DS C 60 pF rss t 29 ns d(on) Resistive Switching Times t 25 ns r V = -10V, V = 0.5 V , I = - 8A GS DS DSS D t 60 ns d(off) R = 3 (External) G t 38 ns f 1 = Gate Q 92 nC g(on) 2,4 = Drain Q V = -10V, V = 0.5 V , I = - 8A 27 nC 3 = Source gs GS DS DSS D Q 23 nC gd R 0.66 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 16 A S GS I Repetitive, Pulse Width Limited by T - 64 A SM JM V I = - 8A, V = 0V, Note 1 - 2.8 V SD F GS t 440 ns rr I = - 8A, -di/dt = -150A/s F Q 7.4 C RM V = -100V, V = 0V R GS I - 33.6 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537