TM PolarP V = - 500V IXTR40P50P DSS I = - 22A Power MOSFET D25 R 260m DS(on) P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C - 500 V DSS J V T = 25 C to 150 C, R = 1M - 500 V DGR J GS G V Continuous 20 V GSS Isolated Tab D S V Transient 30 V GSM I T = 25 C - 22 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T -120 A DM C JM S = Source I T = 25 C - 40 A A C E T = 25 C 3.5 J AS C Features dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 312 W Silicon Chip on Direct-Copper Bond D C (DCB) Substrate T -55 ... +150 C J - UL Recognized Package T 150 C JM - Isolated Mounting Surface T -55 ... +150 C stg - 2500V~ Electrical Isolation T Maximum Lead Temperature for Soldering 300 C Dynamic dv/dt Rating L Avalanche Rated T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Intrinsic Diode V 50/60 H ,RMS, t= 1min 2500 V~ ISOL Z TM The Rugged PolarP Process M Mounting Force 20..120/4.5..27 N/lb Low Q d G Low Drain-to-Tab Capacitance Weight 5 g Low Package Inductance Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = - 250A - 500 V DSS GS D V V = V , I = -1mA - 2.0 - 4.5 V Applications GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS High-Side Switches I V = V , V = 0V - 50 A Push Pull Amplifiers DSS DS DSS GS T = 125C - 250A DC Choppers J Automatic Test Equipment R V = -10V, I = - 20A, Note 1 260 m DS(on) GS D Current Regulators 2015 IXYS CORPORATION, All Rights Reserved DS99937D4/15) IXTR40P50P Symbol Test Conditions Characteristic Values ISOPLUS247 (IXTR) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 20A, Note 1 23 38 S fs DS D C 11.5 nF iss C V = 0V, V = - 25V, f = 1MHz 1150 pF oss GS DS C 93 pF rss t 37 ns d(on) Resistive Switching Times t 59 ns r V = -10V, V = 0.5 V , I = - 20A GS DS DSS D t 90 ns d(off) R = 1 (External) G t 34 ns f Q 205 nC 1 - Gate g(on) 2,4 - Drain Q V = -10V, V = 0.5 V , I = - 20A 55 nC gs GS DS DSS D 3 - Source Q 75 nC gd R 0.40 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 40 A S GS I Repetitive, Pulse Width Limited by T -160 A SM JM V I = - 20A, V = 0V, Note 1 - 3.0 V SD F GS t 477 ns rr I = - 20A, -di/dt = -150A/ s F Q 14.5 C RM V = -100V, V = 0V R GS I - 61 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537