TM PolarP V = - 200V IXTR48P20P DSS I = - 30A Power MOSFET D25 R 93m DS(on) D P-Channel Enhancement Mode Avalanche Rated G ISOPLUS247 E153432 S Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 200 V DSS J G V T = 25C to 150C, R = 1M - 200 V DGR J GS Isolated Tab D S V Continuous 20 V GSS V Transient 30 V GSM G = Gate D = Drain I T = 25C - 30 A D25 C S = Source I T = 25C, Pulse Width Limited by T -144 A DM C JM I T = 25C - 48 A A C E T = 25C 2.5 J AS C Features dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 190 W z D C Silicon Chip on Direct-Copper Bond T -55 ... +150 C (DCB) Substrate J T 150 C - UL Recognized Package JM T -55 ... +150 C - Isolated Mounting Surface stg - 2500V~ Electrical Isolation T 1.6mm (0.062 in.) from Case for 10s 300 C z L Avalanche Rated T Plastic Body for 10s 260 C SOLD z TM The Rugged PolarP Process z V 50/60 Hz, 1 Minute 2500 V~ Low Q ISOL G z Fast Intrinsic Diode F Mounting Force 20..120/4.5..27 N/lb. C z Low Drain-to-Tab Capacitance Weight 5 g z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A - 200 V DSS GS D z High-Side Switches V V = V , I = - 250A - 2.0 - 4.0 V z GS(th) DS GS D Push-Pull Amplifiers z DC Choppers I V = 20V, V = 0V 100 nA GSS GS DS z Automatic Test Equipment I V = V , V = 0V - 25 A z DSS DS DSS GS Load-Switch Applications T = 125C - 200 A z J Fuel Injection Systems R V = -10V, I = - 24A, Note 1 93 m DS(on) GS D 2009 IXYS CORPORATION, All Rights Reserved DS99982B(01/13) IXTR48P20P Symbol Test Conditions Characteristic Values ISOPLUS247 (IXTR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 24A, Note 1 19 32 S fs DS D C 5400 pF iss C V = 0V, V = - 25V, f = 1MHz 1040 pF oss GS DS C 170 pF rss t 30 ns d(on) Resistive Switching Times t 46 ns r V = -10V, V = 0.5 V , I = - 24A GS DS DSS D t 67 ns d(off) R = 3 (External) G t 27 ns f Q 103 nC g(on) 1 - Gate Q V = -10V, V = 0.5 V , I = - 24A 23 nC 2,4 - Drain gs GS DS DSS D 3 - Source Q 40 nC gd R 0.66 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 48 A S GS I Repetitive, Pulse Width Limited by T -192 A SM JM V I = - 24A, V = 0V, Note 1 - 3.3 V SD F GS t 260 ns rr I = - 24A, -di/dt = -150A/s F Q 4.2 C RM V = -100V, V = 0V R GS I - 32.2 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537