TM IXTQ 140N10P V = 100 V DSS PolarHT IXTT 140N10P I = 140 A D25 Power MOSFET R 11 m DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) V T = 25 C to 175 C 100 V DSS J V T = 25 C to 175 C R = 1 M 100 V DGR J GS V Continuous 20 V GS V Transient 30 V GSM I T = 25 C 140 A D25 C I External lead current limit 75 A G D(RMS) D (TAB) I T = 25 C, pulse width limited by T 300 A S DM C JM I T = 25C60A AR C E T = 25C80mJ AR C TO-268 (IXTT) E T = 25 C 2.5 J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G G S P T = 25 C 600 W D (TAB) D C T -55 ... +175 C J G = Gate D = Drain T 175 C S = Source TAB = Drain JM T -55 ... +150 C stg Features T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD l International standard packages l Unclamped Inductive Switching (UIS) M Mounting torque (TO-3P) 1.13/10 Nm/lb.in. d rated Weight TO-3P 5.5 g l Low package inductance TO-268 5.0 g - easy to drive and to protect Symbol Test Conditions Characteristic Values Advantages (T = 25 C, unless otherwise specified) Min. Typ. Max. J l Easy to mount BV V = 0 V, I = 250 A 100 V DSS GS D l Space savings V V = V , I = 250A 3.0 5.0 V l GS(th) DS GS D High power density I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 175 C 500 A GS J R V = 10 V, I = 0.5 I 11 m DS(on) GS D D25 V = 15 V, I = 300 A 9 m GS D Pulse test, t 300 s, duty cycle d 2 % DS99133E(12/05) 2006 IXYS All rights reserved IXTQ 140N10P IXTT 140N10P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 45 65 S fs DS D D25 C 4700 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1850 pF oss GS DS C 600 pF rss t 35 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 50 ns r GS DS DSS D t R = 4 (External) 85 ns d(off) G t 26 ns f Q 155 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 33 nC gs GS DS DSS D D25 Q 85 nC gd R 0.25C/W thJC R (TO-3P) 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 140 A S GS TO-268 (IXTT) Outline I Repetitive 300 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 120 ns rr F Q V = 50 V, V = 0 V 2.0 C RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2