TM Polar V = 100V IXTT170N10P DSS I = 170A Power MOSFET IXTQ170N10P D25 R 9m DS(on) IXTK170N10P TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 100 V DSS J V T = 25C to 175C, R = 1M 100 V DGR J GS G D V Continuous 20 V GSS S Tab V Transient 30 V GSM I T = 25C 170 A TO-264 (IXTK) D25 C I External Lead Current Limit 160 A L(RMS) I T = 25C, Pulse Width Limited by T 350 A DM C JM I T = 25C 60 A A C E T = 25C 2 J AS C G dv/dt I I , V V , T 175C 10 V/ns Tab D S DM DD DSS J S P T = 25C 715 W D C T -55 to +175 C G = Gate D = Drain J S = Source Tab = Drain T +175 C JM T -55 to +175 C stg Features T 1.6mm (0.063in) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD z International Standard Packages M Mounting Torque (TO-264 & TO-3P) 1.13/10 Nm/lb.in. z d Fast Intrinsic Rectifier z Weight TO-268 4.0 g Avalanche Rated z TO-3P 5.5 g Low R and Q DS(ON) G TO-264 10.0 g z Low Package Inductance Advantages Symbol Test Conditions Characteristic Values z High Power Density (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Easy to Mount z BV V = 0V, I = 250A 100 V Space Savings DSS GS D V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS z Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A DSS DS DSS GS Power Supplies T = 150C 250 A J z DC-DC Converters z R V = 10V, I = 0.5 I , Note 1 9 m Laser Drivers DS(on) GS D D25 V = 15V, I = 350A 7 m z GS D AC and DC Motor Drives z Robotics and Servo Controls 2010 IXYS CORPORATION, All Rights Reserved DS99176F(01/10)IXTT170N10P IXTQ170N10P IXTK170N10P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 50 72 S fs DS D D25 C 6000 pF iss C V = 0V, V = 25V, f = 1MHz 2340 pF oss GS DS C 730 pF rss t 35 ns d(on) Resistive Switching Times t 50 ns r V = 10V, V = 0.5 V , I = 60A GS DS DSS D t 90 ns d(off) R = 3.3 (External) G t 33 ns f Q 198 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 39 nC gs GS DS DSS D D25 Q 107 nC gd R 0.21 C/W thJC R (TO-3P) 0.25 C/W thCS (TO-264) 0.15 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TO-264 AA ( IXTK) Outline I V = 0V 170 A S GS I Repetitive, Pulse Width Limited by T 350 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 120 ns rr I = 25A, -di/dt = 100A/s, F Q V 2.0= 50V, V = 0V C RM R GS 1 = Gate Back Side Note 1. Pulse test, t 300s, duty cycle, d 2%. 2 = Drain 3 = Source Tab = Drain Dim. Millimeter Inches TO-268 (IXTT) Outline Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537