TM IXTH26N60P V = 600 V PolarHV DSS IXTQ26N60P I =26 A Power MOSFET D25 IXTT26N60P R 270 m DS(on) N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V TO-3P (IXTQ) DSS J V T = 25C to 150C R = 1 M 600 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D I T = 25C26A D25 C S D (TAB) I T = 25C, pulse width limited by T 65 A DM C JM TO-268 (IXTT) I T = 25C13A AR C E T = 25C40mJ AR C E T = 25C 1.2 J AS C G S dv/dt I I , di/dt 100 A/s, V V 10 V/ns D (TAB) S DM DD DSS T 150C, R = 5 J G PLUS220 (IXTV) P T = 25C 460 W D C T -55 ... +150 C J T 150 C JM G T -55 ... +150 C stg D D (TAB) S T 1.6 mm (0.062 in.) from case for 10 s 300 C L PLUS220SMD (IXTV S) T Plastic body for 10 s 260 C SOLD M Mounting torque (TO-3P&TO-247) 1.13/10 Nm/lb.in. d F Mounting force (PLUS220) 11..65/2.5..15 N/lb C Weight TO-3P 5.5 g G TO-247 6.0 g S D (TAB) TO-268 5.0 g PLUS220 & PLUS220SMD 4.0 g G = Gate D = Drain S = Source TAB = Drain Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. Features J z Fast Recovery diode BV V = 0 V, I = 250 A 600 V DSS GS D z Unclamped Inductive Switching (UIS) V V = V , I = 250 A 3.0 5.0 V rated GS(th) DS GS D z International standard packages I V = 30 V, V = 0 V 100 nA z GSS GS DS Low package inductance - easy to drive and to protect I V = V 10 A DSS DS DSS V = 0 V T = 125C 250 A GS J Advantages z Easy to mount R V = 10 V, I = 0.5 I 270 m DS(on) GS D D25 z Space savings Pulse test, t 300 s, duty cycle d 2 % z High power density DS99376E(12/06) 2006 IXYS All rights reserved IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 16 26 S fs DS D D25 C 4150 pF iss C V = 0 V, V = 25 V, f = 1 MHz 400 pF oss GS DS C 27 pF rss t 25 ns d(on) t V = 10 V, V = 0.5 I , I = 0.5 I 27 ns r GS DS D25 D D25 t R = 5 (External) 75 ns d(off) G t 21 ns f Q 72 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 27 nC gs GS DS DSS D D25 Q 24 nC gd R 0.27 C/W thJC R TO-3P, PLUS220 & TO-247 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 26 A S GS I Repetitive 78 A SM V I = I , V = 0 V, pulse test 1.5 V SD F S GS t I = 26A, -di/dt = 100 A/s 500 n rr F Characteristic Curves Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics 25 C 25 C 60 V 10V V = 10V GS = 24 GS 54 7V 7V 48 20 42 6V 16 36 30 6V 12 24 8 18 12 4 5V 6 5V 0 0 0 3 6 9 12 15 18 21 24 27 30 0 123 4567 V - Volts V - Volts D S D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 I - Amperes D I - Amperes D