V = - 100V IXTH50P10 Standard DSS I = - 50A IXTT50P10 Power MOSFET D25 R 55m DS(on) P-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated G (TAB) Symbol Test Conditions Maximum Ratings D S V T = 25C to 150C -100 V DSS J V T = 25C to 150C, R = 1M -100 V DGR J GS TO-268 (IXTT) V Continuous 20 V GSS V Transient 30 V GSM I T = 25C - 50 A D25 C G I T = 25C, pulse width limited by T - 200 A DM C JM S I T = 25C - 50 A A C (TAB) E T = 25C30mJ AS C G = Gate D = Drain P T = 25C 300 W D C S = Source TAB = Drain T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C Features stg T 1.6mm (0.062 in.) from case for 10s 300 C L z International standard packages T Plastic body for 10s 260 C SOLD JEDEC TO-247 AD M Mounting torque (TO-247) 1.13 / 10 Nm/lb.in. z TM d Low R HDMOS process DS(ON) z Rugged polysilicon gate cell structure Weight TO-247 6 g z TO-268 5 g Unclamped Inductive Switching (UIS) rated z Low package inductance (< 5nH) - easy to drive and to protect Applications z High side switching Symbol Test Conditions Characteristic Values z Push-pull amplifiers (T = 25C, unless otherwise specified) Min. Typ. Max. J z DC Choppers BV V = 0V, I = - 250 A -100 V z DSS GS D Automatic test equipment V V = V , I = - 250A - 3.0 - 5.0 V GS(th) DS GS D Advantages I V = 20V, V = 0V 100 nA GSS GS DS z Easy to mount with 1 screw I V = 0.8 V - 25 A DSS DS DSS (isolated mounting screw hole) V = 0V T = 125C -1 mA GS J z Space savings z R V = -10V, I = 0.5 I , Note 1 55 m High power density DS(on) GS D D25 2008 IXYS CORPORATION, All rights reserved DS98905E(6/08)IXTH50P10 IXTT50P10 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 13 22 S fs DS D D25 C 4350 pF iss P C V = 0V, V = - 25V, f = 1MHz 1505 pF 1 2 3 oss GS DS C 733 pF rss t 46 ns d(on) Resistive Switching Times t 39 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 86 ns d(off) e R = 4.7 (External) G t 38 ns f Terminals: 1 - Gate 2 - Drain Q 140 nC g(on) Dim. Millimeter Inches Q V = -10V, V = 0.5 V , I = 0.5 I 25 nC Min. Max. Min. Max. gs GS DS DSS D D25 A 4.7 5.3 .185 .209 Q 85 nC gd A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 R 0.42 C/W thJC b 1.0 1.4 .040 .055 R 0.25 C/W b 1.65 2.13 .065 .084 thCS 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Source-Drain Diode E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 (T = 25C, unless otherwise specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V - 50 A S GS R 4.32 5.49 .170 .216 I Repetitive, pulse width limited by T - 200 A SM JM V I = - 25A, V = 0V, Note 1 - 3.0 V SD F GS TO-268 (IXTT) Outline I = - 25A, di/dt = -100A/s, V = - 50V, V = 0V t 180 ns F R GS rr Note 1: Pulse test, t 300s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537