TM IXTH 96N20P V = 200 V DSS PolarHT IXTQ 96N20P I = 96 A D25 Power MOSFET IXTT 96N20P R 24 m DS(on) N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G D V T = 25 C to 150 C 200 V S DSS J (TAB) V T = 25 C to 150 C R = 1 M 200 V DGR J GS V Continous 20 V TO-3P (IXTQ) GSS V Transient 30 V GSM I T = 25C96A D25 C I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 225 A DM C JM G D (TAB) I T = 25C60A AR C S E T = 25C50mJ AR C E T = 25 C 1.5 J TO-268 (IXTT) AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G G P T = 25 C 600 W S D C D (TAB) T -55 ... +175 C J T 175 C JM G = Gate D = Drain T -55 ... +150 C stg S = Source TAB = Drain T 1.6 mm (0.062 in.) from case for 10 s 300 C L Features T Plastic body for 10 s 260 C SOLD l International standard packages M Mounting torque (TO-3P, TO-247) 1.13/10 Nm/lb.in. d l Unclamped Inductive Switching (UIS) Weight TO-3P 5.5 g rated TO-247 6.0 g l Low package inductance TO-268 5.0 g - easy to drive and to protect Advantages Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J l Easy to mount BV V = 0 V, I = 250 A 200 V l DSS GS D Space savings l High power density V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 150 C 250 A GS J R V = 10 V, I = 0.5 I 24 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99117E(10/05) 2006 IXYS All rights reservedIXTH 96N20P IXTQ 96N20P IXTT 96N20P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 40 52 S fs DS D D25 C 4800 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1020 pF oss GS DS C 270 pF rss t 28 ns d(on) t V = 10 V, V = 0.5 V , I = I 30 ns r GS DS DSS D D25 t R = 4 (External) 75 ns d(off) G t 30 ns f Q 145 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 80 nC gd R 0.25 C/W thJC R (TO-3P, TO-247) 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 96 A S GS TO-268 (IXTT) Outline I Repetitive 240 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 160 ns rr F Q V = 100 V, V = 0 V 3.0 C RM R GS TO-247 (IXTH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 1 2 3 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Terminals: 1 - Gate 2 - Drain Q 5.89 6.40 0.232 0.252 3 - Source Tab - Drain R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2