TM
IXTH 30N60P V = 600 V
PolarHV
DSS
I =30 A
IXTQ 30N60P
D25
Power MOSFET
IXTT 30N60P R 240 m
DS(on)
N-Channel Enhancement Mode
IXTV 30N60P
Avalanche Rated
IXTV 30N60PS
Symbol Test Conditions Maximum Ratings
TO-247 (IXTH)
V T = 25 C to 150 C 600 V
DSS J
V T = 25 C to 150 C; R = 1 M 600 V
DGR J GS
V Continuous 30 V
GSS
V Transient 40 V
GSM
G
D (TAB)
D
I T = 25C30A
S
D25 C
I T = 25 C, pulse width limited by T 80 A
DM C JM TO-3P (IXTQ)
I T = 25C30A
AR C
E T = 25C50mJ
AR C
E T = 25 C 1.5 J
AS C
G
dv/dt I I , di/dt 100 A/s, V V , 10 V/ns
S DM DD DSS D
D (TAB)
S
T 150C, R = 4
J G
P T = 25 C 540 W
TO-268 (IXTT)
D C
T -55 ... +150 C
J
T 150 C
JM
T -55 ... +150 C
G
stg
S
T 1.6 mm (0.062 in.) from case for 10 s 300 C
L
D (TAB)
T Plastic body for 10 s 260 C
SOLD
PLUS220 (IXTV)
M Mounting torque (TO-3P, TO-247) 1.13/10 Nm/lb.in.
d
F Mounting force (PLUS220) 11..65/2.5..15 N/lb.
C
Weight TO-247 6.0 g
G
TO-3P 5.5 g
D D (TAB)
PLUS220 4.0 g
S
TO-268 5.0 g
PLUS220 (IXTV...S)
Symbol Test Conditions Characteristic Values
(T = 25 C, unless otherwise specified) Min. Typ. Max.
J
G
D (TAB)
BV V = 0 V, I = 250 A 600 V S
DSS GS D
G = Gate D = Drain
V V = V , I = 250A 3.0 5.0 V
GS(th) DS GS D
S = Source TAB = Drain
I V = 30 V, V = 0 100 nA
Features
GSS GS DS
l
Fast Recovery diode
I V = V 25 A
DSS DS DSS l
Unclamped Inductive Switching (UIS)
V = 0 V T = 125 C 250 A
GS J
rated
l
International standard packages
R V = 10 V, I = 0.5 I 240 m
DS(on) GS D D25
l
Low package inductance
Pulse test, t 300 s, duty cycle d 2 %
- easy to drive and to protect
DS99251E(12/05)
2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Symbol Test Conditions Characteristic Values
(T = 25 C, unless otherwise specified)
J
Min. Typ. Max.
g V = 20 V; I = 0.5 I , pulse test 22 25 S
fs DS D D25
C 5050 pF
iss
C V = 0 V, V = 25 V, f = 1 MHz 540 pF
oss GS DS
C 53 pF
rss
t 29 ns
d(on)
t V = 10 V, V = 0.5 I 20 ns
r GS DS D25
t R = 4 (External) 80 ns
d(off) G
t 25 ns
f
Q 82 nC
g(on)
Q V = 10 V, V = 0.5 V , I = 0.5 I 28 nC
gs GS DS DSS D D25
Q 30 nC
gd
R 0.23 C/W
thJC
R 0.21 C/W
thCS
Source-Drain Diode Characteristic Values
(T = 25 C, unless otherwise specified)
J
Symbol Test Conditions Min. Typ. Max.
I V = 0 V 30 A
S GS
I Repetitive 80 A
SM
V I = I , V = 0 V, 1.5 V
SD F S GS
Pulse test, t 300 s, duty cycle d 2 %
t I = 25A, -di/dt = 100 A/s 500 ns
rr F
Q V = 100V 4.0 C
RM R
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25C @ 25C
30
60
V = 10V
V = 10V
GS 55
GS
27
8V
8V
50
24
7V
7V
45
21
6.5V
40
6.5V
18
35
15
30
6V
25
12
6V
20
9
15
5.5V
6
10
5.5V
3
5V
5
5V
0 0
01 23 45 67 8 0 3 6 9 12 15 18 21 24 27 30
V - Volts
V - Volts
D S
D S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
I - Amperes
D
I - Amperes
D