TM TrenchP V = - 200V IXTK120P20T DSS Power MOSFETs I = - 120A IXTX120P20T D25 R 30m DS(on) t 300ns rr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C - 200 V D DSS J S V T = 25C to 150C, R = 1M - 200 V DGR J GS Tab V Continuous 15 V GSS V Transient 25 V GSM PLUS247 (IXTX) I T = 25C -120 A D25 C I T = 25C, Pulse Width Limited by T - 400 A DM C JM I T = 25C -100 A A C E T = 25C3J G AS C D Tab S dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 1040 W G = Gate D = Drain D C S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L z International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD z Avalanche Rated z M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. Extended FBSOA d z F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Fast Intrinsic Recitifier C z Low R and Q DS(ON) G Weight TO-264 10 g PLUS247 6 g Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A - 200 V DSS GS D z V V = V , I = - 250A - 2.5 - 4.5 V High-Side Switching GS(th) DS GS D z Push Pull Amplifiers I V = 15V, V = 0V 200 nA GSS GS DS z DC Choppers z Automatic Test Equipment I V = V , V = 0V - 25 A DSS DS DSS GS z Current Regulators T = 125C - 300 A J z Battery Charger Applications R V = -10V, I = 0.5 I , Note 1 30 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS100401B(5/13) IXTK120P20T IXTX120P20T Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 60A, Note 1 85 145 S fs DS D C 73 nF iss C V = 0V, V = - 25V, f = 1MHz 2550 pF oss GS DS C 480 pF rss t 90 ns d(on) Resistive Switching Times t 85 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 200 ns 1 - Gate d(off) 2,4 - Drain R = 1 (External) G 3 - Source t 50 ns f Q 740 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 220 nC gs GS DS DSS D D25 Q 120 nC gd R 0.12 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V -120 A S GS I Repetitive, Pulse Width Limited by T - 480 A SM JM TM PLUS247 Outline V I = -100A, V = 0V, Note 1 -1.4 V SD F GS t 300 ns rr I = - 60A, -di/dt = -100A/s F Q 3.3 C RM V = -100V, V = 0V I R GS 25.6 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537