TM PolarP V = - 500V IXTK40P50P DSS I = - 40A Power MOSFET IXTX40P50P D25 R 230m DS(on) P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) G D Symbol Test Conditions Maximum Ratings S Tab V T = 25 C to 150 C - 500 V DSS J V T = 25 C to 150 C, R = 1M - 500 V DGR J GS PLUS247 (IXTX) V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C - 40 A D25 C I T = 25 C, Pulse Width Limited by T - 120 A DM C JM G I T = 25 C - 40 A D A C Tab S E T = 25 C 3.5 J AS C G = Gate D = Drain dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J S = Source Tab = Drain P T = 25 C 890 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C Features stg T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD TM Rugged PolarP Process M Mounting Force (PLUS247) 20..120/4.5..27 N/lb d Avalanche Rated Mounting Torque (TO-264) 1.13/10 Nm/lb.in Fast Intrinsic Diode Weight PLUS247 6 g Low Package Inductance TO-264 10 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = - 250A - 500 V Applications DSS GS D V V = V , I = -1mA - 2.0 - 4.5 V GS(th) DS GS D High-Side Switches I V = 20V, V = 0V 100 nA Push Pull Amplifiers GSS GS DS DC Choppers I V = V , V = 0V - 50A DSS DS DSS GS Automatic Test Equipment T = 125C - 250A J Current Regulators R V = -10V, I = 0.5 I , Note 1 230 m DS(on) GS D D25 2015 IXYS CORPORATION, All Rights Reserved DS99935D(6/15) IXTK40P50P IXTX40P50P Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 23 38 S fs DS D D25 C 11.5 nF iss C V = 0V, V = - 25V, f = 1MHz 1150 pF oss GS DS C 93 pF rss t 37 ns d(on) Resistive Switching Times Terminals: 1 - Gate t 59 ns r V = -10V, V = 0.5 V , I = 0.5 I 2 - Drain GS DS DSS D D25 3 - Source t 90 ns d(off) 4 - Drain R = 1 (External) G Dim. Millimeter Inches t 34 ns f Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q 205 nC g(on) A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q V = -10V, V = 0.5 V , I = 0.5 I 55 nC gs GS DS DSS D D25 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q 75 nC gd b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 R 0.14 C/W thJC D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R 0.15 C/W thCS e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 Source-Drain Diode P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Symbol Test Conditions Characteristic Values Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 I V = 0V - 40 A S GS T 1.57 1.83 .062 .072 I Repetitive, Pulse Width Limited by T -160 A SM JM TM PLUS247 Outline V I = - 20A, V = 0V, Note 1 - 3.0 V SD F GS t 477 ns rr I = - 20A, -di/dt = -150A/ s F Q 14.5 C RM V = -100V, V = 0V R GS I - 61 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537