Preliminary Technical Information Linear Power MOSFET V = 1500V IXTK8N150L DSS w/Extended FBSOA I = 8A IXTX8N150L D25 R < 3.6 DS(on) N-Channel Enhancement Mode Guaranteed FBSOA TO-264(IXTK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1500 V DSS J V T = 25C to 150C, R = 1M 1500 V DGR J GS G D (TAB) V Continuous 30 V S GSS V Transient 40 V GSM I T = 25C 8 A D25 C PLUS247(IXTX) I T = 25C, Pulse Width Limited by T 20 A DM C JM P T = 25C 700 W D C T -55 to +150 C J T 150 C JM G T -55 to +150 C stg D (TAB) S T 1.6mm (0.063 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD G = Gate D = Drain M Mounting Torque (IXTK) 1.13/10 Nm/lb.in. S = Source TAB = Drain d F Mounting Force (IXTX) 20..120 / 4.5..27 N/lb. C Weight TO-264 10 g PLUS247 6 g Features z Designed for Linear Operations z International Standard Packages z Guaranteed FBSOA at 60C z Molding Epoxies Meet UL94 V-0 Flammability Classification Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Programmable Loads BV V = 0V, I = 1mA 1500 V DSS GS D z Current Regulators V V = V , I = 250A 5.0 8.0 V GS(th) DS GS D z DC-DC Convertors z I V = 30V, V = 0V 200 nA Battery Chargers GSS GS DS z DC Choppers I V = V 50 A DSS DS DSS z Temperature and Lighting Controls V = 0V T = 125C 3 mA GS J R V = 20V, I = 0.5 I , Note 1 3.6 Advantages DS(on) GS D D25 z Easy to Mount z Space Savings z High Power Density 2009 IXYS CORPORATION, All Rights Reserved DS99616A(2/09) IXTK8N150L IXTX8N150L Symbol Test Conditions Characteristic Values TO-264 (IXTK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 0.5 I , Note 1 1.4 2.3 3.2 S fs DS D D25 C 8000 pF iss C V = 0V, V = 25V, f = 1MHz 405 pF oss GS DS C 70 pF rss t 36 ns d(on) Resistive Switching Times t 18 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 90 ns d(off) R = 2 (External) G t 95 ns f Q 250 nC g(on) Q V = 15V, V = 0.5 V , I = 0.5 I 80 nC gs GS DS DSS D D25 Q 116 nC gd R 0.18 C/W thJC R 0.15 C/W thCS Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 1000V, I = 0.5A, T = 60C, T = 3s 500 W DS D C P TM PLUS 247 (IXTX) Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 8 A S GS I Repetitive, Pulse Width Limited by T 32 A SM JM V I = 8A, V = 0V, Note 1 1.2 V SD F GS t I = I , -di/dt =100A/s, V = 100V 1700 ns rr F S R Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Notes: 1. Pulse Test, t 300s Duty Cycle, d 2%. Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 PRELIMINARY TECHNICAL INFORMATION b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 The product presented herein is under development. The Technical Specifications offered are derived b 2.92 3.12 .115 .123 2 from data gathered during objective characterizations of preliminary engineering lots but also may yet C 0.61 0.80 .024 .031 contain some information supplied during a pre-production design evaluation. IXYS reserves the right D 20.80 21.34 .819 .840 to change limits, test conditions, and dimensions without notice. E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537