High Voltage V = 1000V IXTY01N100D DSX Power MOSFET IXTU01N100D R 80 DS(on) IXTP01N100D D N-Channel TO-252 (IXTY) G G S S D (Tab) TO-251 (IXTU) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSX J V T = 25 C to 150 C 1000 V DGX J G V Continuous 20 V GSX D S V Transient 30 V D (Tab) GSM I T = 25 C, Pulse Width Limited by T 400 mA DM C J TO-220AB (IXTP) P T = 25 C 25 W D C T = 25 C 1.1 W A T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg G D D (Tab) S T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD G = Gate D = Drain M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d S = Source Tab = Drain Weight TO-252 0.35 g TO-251 0.40 g TO-220 3.00 g Features Normally ON Mode International Standard Packages TM Low R HDMOS Process Symbol Test Conditions Characteristic Values DS(on) Rugged Polysilicon Gate Cell Structure (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Fast Switching Speed BV V = -10V, I = 25 A 1000 V DSX GS D Advantages V V = 25V, I = 25 A - 2.0 - 4.5 V GS(off) DS D Easy to Mount I V = 20V, V = 0V 100 nA GSX GS DS Space Savings I V = V , V = -10V 10 A High Power Density DSX(off) DS DSX GS T = 125C 250A J Applications R V = 0V, I = 50mA, Note 1 50 80 DS(on) GS D Level Shifting I V = 0V, V = 25V, Note 1 400 mA D(on) GS DS Triggers Solid State Relays Current Regulators 2017 IXYS CORPORATION, All Rights Reserved DS98809E(6/17)IXTY01N100D IXTU01N100D IXTP01N100D Symbol Test Conditions Characteristic Values TO-252 AA (IXTY) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 100V, I = 100mA, Note 1 100 200 mS fs DS D C 100 pF iss C V = -10V, V = 25V, f = 1MHz 12 pF oss GS DS C 2 pF rss t 7 ns d(on) Resistive Switching Times 1. Gate t 10 ns r 2. Drain V = 5V, V = 50V, I = 50mA GS DS D 3. Source t 34 ns d(off) R = 30 (External) G t 64 ns f Q 5.8 nC g(on) Dim. Millimeter Inches Min. Max. Min. Max. Q V = 5V, V = 500V, I = 50mA 3.6 nC gs GS DS D A 2.19 2.38 0.086 0.094 Q 0.4 nC gd A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 R 5.0 C/W b 0.64 0.89 0.025 0.035 thJC R TO-220 0.50 C/W b1 0.76 1.14 0.030 0.045 thCS b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 Source-Drain Diode D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 Symbol Test Conditions Characteristic Values E1 4.32 5.21 0.170 0.205 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. e 2.28 BSC 0.090 BSC J e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 V I = 100mA, V = -10V, Note 1 1.5 V SD F GS L 0.51 1.02 0.020 0.040 I = 750mA, -di/dt = 100A/ s t F 1.5 s L1 0.64 1.02 0.025 0.040 rr L2 0.89 1.27 0.035 0.050 V = 25V, V = -10V R GS L3 2.54 2.92 0.100 0.115 TO-220 (IXTP) Outline Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-251 (IXTU) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 .086 .094 A1 0.89 1.14 0.35 .045 b 0.64 0.89 .025 .035 b1 0.76 1.14 .030 .045 b2 5.21 5.46 .205 .215 c 0.46 0.58 .018 .023 c1 0.46 0.58 .018 .023 Pins: 1 - Gate 2 - Drain D 5.97 6.22 .235 .245 3 - Source E 6.35 6.73 .250 .265 e 2.28 BSC .090 BSC e1 4.57 BSC .180 BSC H 17.02 17.78 .670 .700 L 8.89 9.65 .350 .380 L1 1.91 2.28 .075 .090 L2 0.89 1.27 .035 .050 1. Gate 2,4 .Drain 3. Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537