X-On Electronics has gained recognition as a prominent supplier of IXTY01N100D MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTY01N100D MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTY01N100D IXYS

IXTY01N100D electronic component of IXYS
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Part No.IXTY01N100D
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25
Datasheet: IXTY01N100D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
70: USD 2.275 ea
Line Total: USD 159.25 
Availability - 339
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 70  Multiples: 70
Pack Size: 70
Availability Price Quantity
339
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 70
Multiples : 70
70 : USD 2.275
210 : USD 2.275
350 : USD 2.275
1400 : USD 2.275
2100 : USD 2.275

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTY01N100D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTY01N100D and other electronic components in the MOSFETs category and beyond.

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High Voltage V = 1000V IXTY01N100D DSX Power MOSFET IXTU01N100D R 80 DS(on) IXTP01N100D D N-Channel TO-252 (IXTY) G G S S D (Tab) TO-251 (IXTU) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSX J V T = 25 C to 150 C 1000 V DGX J G V Continuous 20 V GSX D S V Transient 30 V D (Tab) GSM I T = 25 C, Pulse Width Limited by T 400 mA DM C J TO-220AB (IXTP) P T = 25 C 25 W D C T = 25 C 1.1 W A T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg G D D (Tab) S T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD G = Gate D = Drain M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d S = Source Tab = Drain Weight TO-252 0.35 g TO-251 0.40 g TO-220 3.00 g Features Normally ON Mode International Standard Packages TM Low R HDMOS Process Symbol Test Conditions Characteristic Values DS(on) Rugged Polysilicon Gate Cell Structure (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Fast Switching Speed BV V = -10V, I = 25 A 1000 V DSX GS D Advantages V V = 25V, I = 25 A - 2.0 - 4.5 V GS(off) DS D Easy to Mount I V = 20V, V = 0V 100 nA GSX GS DS Space Savings I V = V , V = -10V 10 A High Power Density DSX(off) DS DSX GS T = 125C 250A J Applications R V = 0V, I = 50mA, Note 1 50 80 DS(on) GS D Level Shifting I V = 0V, V = 25V, Note 1 400 mA D(on) GS DS Triggers Solid State Relays Current Regulators 2017 IXYS CORPORATION, All Rights Reserved DS98809E(6/17)IXTY01N100D IXTU01N100D IXTP01N100D Symbol Test Conditions Characteristic Values TO-252 AA (IXTY) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 100V, I = 100mA, Note 1 100 200 mS fs DS D C 100 pF iss C V = -10V, V = 25V, f = 1MHz 12 pF oss GS DS C 2 pF rss t 7 ns d(on) Resistive Switching Times 1. Gate t 10 ns r 2. Drain V = 5V, V = 50V, I = 50mA GS DS D 3. Source t 34 ns d(off) R = 30 (External) G t 64 ns f Q 5.8 nC g(on) Dim. Millimeter Inches Min. Max. Min. Max. Q V = 5V, V = 500V, I = 50mA 3.6 nC gs GS DS D A 2.19 2.38 0.086 0.094 Q 0.4 nC gd A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 R 5.0 C/W b 0.64 0.89 0.025 0.035 thJC R TO-220 0.50 C/W b1 0.76 1.14 0.030 0.045 thCS b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 Source-Drain Diode D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 Symbol Test Conditions Characteristic Values E1 4.32 5.21 0.170 0.205 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. e 2.28 BSC 0.090 BSC J e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 V I = 100mA, V = -10V, Note 1 1.5 V SD F GS L 0.51 1.02 0.020 0.040 I = 750mA, -di/dt = 100A/ s t F 1.5 s L1 0.64 1.02 0.025 0.040 rr L2 0.89 1.27 0.035 0.050 V = 25V, V = -10V R GS L3 2.54 2.92 0.100 0.115 TO-220 (IXTP) Outline Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-251 (IXTU) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 .086 .094 A1 0.89 1.14 0.35 .045 b 0.64 0.89 .025 .035 b1 0.76 1.14 .030 .045 b2 5.21 5.46 .205 .215 c 0.46 0.58 .018 .023 c1 0.46 0.58 .018 .023 Pins: 1 - Gate 2 - Drain D 5.97 6.22 .235 .245 3 - Source E 6.35 6.73 .250 .265 e 2.28 BSC .090 BSC e1 4.57 BSC .180 BSC H 17.02 17.78 .670 .700 L 8.89 9.65 .350 .380 L1 1.91 2.28 .075 .090 L2 0.89 1.27 .035 .050 1. Gate 2,4 .Drain 3. Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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