TM IXTA 3N50P V = 500 V PolarHV DSS IXTP 3N50P I = 3.6 A D25 Power MOSFET IXTY 3N50P R 2.0 DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C R = 1 M 500 V DGR J GS V 30 V GSS V 40 V GSM G (TAB) D S I T = 25 C 3.6 A D25 C I T = 25 C, pulse width limited by T 8A DM C JM TO-263 (IXTA) I T = 25C3A AR C E T = 25C10mJ AR C E T = 25 C 180 mJ AS C G dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S S DM DD DSS (TAB) T 150C, R = 20 J G TO-252 (IXTY) P T = 25C70W D C T -55 ... +150 C J T 150 C G JM T -55 ... +150 C stg S T 1.6 mm (0.062 in.) from case for 10 s 300 C L (TAB) T Plastic body for 10 s 260 C SOLD G = Gate D = Drain M Mounting torque (TO-220) 1.13/10 Nm/lb.in. d S = Source TAB = Drain Weight TO-220 4 g Features TO-263 3 g TO-252 0.8 g l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance Symbol Test Conditions Characteristic Values - easy to drive and to protect (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 500 V DSS GS D Advantages V V = V , I = 50A 3.0 5.5 V GS(th) DS GS D l Easy to mount I V = 30 V , V = 0 100 nA GSS GS DC DS l Space savings l I V = V 5 A High power density DSS DS DSS V = 0 V T = 125C50 A GS J R V = 10 V, I = 0.5 I 2.0 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % 2006 IXYS All rights reserved DS99200E(12/05)IXTA 3N50P IXTP 3N50P IXTY 3N50P TO-263 (IXTA) Outline Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 2.5 3.5 S fs DS D D25 C 409 pF iss C V = 0 V, V = 25 V, f = 1 MHz 48 pF oss GS DS C 6.1 pF rss t 15 ns d(on) t V = 10 V, V = 0.5 V , I = I 15 ns r GS DS DSS D D25 t R = 20 (External) 38 ns d(off) G t 12 ns f Q 9.3 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 3.3 nC gs GS DS DSS D D25 Q 3.4 nC gd R 1.8 C/W thJC R (TO-220) 0.25 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 3 A S GS I Repetitive 5 A TO-220 (IXTP) Outline SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 3 A, -di/dt = 100 A/s 400 ns rr F V = 100 V, V = 0 V R GS TO-252 AA (IXTY) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.035 0.045 Pins: 1 - Gate 2 - Drain A2 0 0.13 0 0.005 3 - Source 4 - Drain b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 L 0.51 1.02 0.020 0.040 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2