TM Trench V = 100V IXTY44N10T DSS Power MOSFET I = 44A IXTP44N10T D25 R 30m DS(on) N-Channel Enhancement Mode TO-252 Avalanche Rated (IXTY) G S D (Tab) TO-220 Symbol Test Conditions Maximum Ratings (IXTP) V T = 25 C to 175 C 100 V DSS J V T = 25 C to 175 C, R = 1M 100 V DGR J GS V Continuous 20 V GSS G D V Transient 30 V GSM S D (Tab) I T = 25 C44 A D25 C I Lead Current Limit, (RMS) (TO-252) 25 A LRMS I T = 25 C, Pulse Width Limited by T 110 A DM C JM G = Gate D = Drain S = Source Tab = Drain I T = 25 C10 A A C E T = 25 C 250 mJ AS C dv/dt I I , V V ,T 175 C 12 V/ns S DM DD DSS J Features P T = 25 C 130 W D C International Standard Packages T -55 ... +175 C J 175C Operating Temperature T 175 C JM Avalanche Rated T -55 ... +175 C stg Low R DS(on) T Maximum Lead Temperature for Soldering 300 C High Current Handling Capability L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d Advantages Weight TO-252 0.35 g Easy to Mount TO-220 3.00 g Space Savings High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Automotive BV V = 0V, I = 250 A 100 V DSS GS D - Motor Drives - 24 / 48V Power Bus V V = V , I = 25A 2.5 4.5 V GS(th) DS GS D - ABS Systems I V = 20V, V = 0V 100 nA GSS GS DS DC/DC Converters and Off-Line UPS Primary- Side Switch I V = V , V = 0V 1 A DSS DS DSS GS High Current Switching Applications T = 150C 200A J R V = 10V, I = 0.5 I , Notes 1, 2 30 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS99646B(11/18)IXTY44N10T IXTP44N10T Symbol Test Conditions Characteristic Values TO-252 AA Outline E AA (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J b3 L3 c2 4 g V = 10V, I = 0.5 I , Note 1 13 21 S fs DS D D25 A1 H L4 1 2 3 A2 C 1567 pF iss L1 L C V = 0V, V = 25V, f = 1MHz 200 pF oss GS DS b2 1 - Gate c e L2 e1 2,4 - Drain e1 e1 e1 e1 e1 C 47 pF 0 rss 3 - Source 5.55MIN OPTIONAL t 21 ns d(on) Resistive Switching Times 6.50MIN 4 t 47 ns r V = 10V, V = 0.5 V , I = 10A 6.40 GS DS DSS D t 36 ns d(off) 2.85MIN R = 18 (External) BOTTOM G 2.28 1.25MIN VIEW t 32 ns LAND PATTERN RECOMMENDATION f Q 27.4 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 8.8 nC gs GS DS DSS D D25 Q 9.0 nC gd R 1.15C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 44 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 140 A SM JM A E oP A1 V I = 22A, V = 0V, Note 1 1.1 V F GS SD H1 Q t 60 ns rr I = 0.5 I , V = 0V F D25 GS D2 D I 4.8 A -di/dt = 100A/ s RM D1 V = 50V Q R 144 nC E1 RM A2 EJECTOR PIN L1 L ee c 3X b e1e1 3X b2 1 - Gate 2,4 - Drain Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 3 - Source 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537