IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET V = 500 V DSS Low Capacitance Z-MOS MOSFET Process TM I = 10 A D25 Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications 150V (operating) Note: All data is per the IXZ210N50L single ended device unless otherwise noted. 300 & 550 Watts Symbol Test Conditions Maximum Ratings 175MHz T = 25C to 150C J V 500 V DSS T = 25C to 150C R = 1 M V J GS 500 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C I c 10 A D25 T = 25C, pulse width limited by c I 60 A DM T JM T = 25C c I 16 A AR T = 25C c E TBD mJ AR I I , di/dt 100A/s, V S DM DD 5 V/ns V , DSS dv/dt T 150C, R = 0.2 j G I = 0 S >200 V/ns IXZ210N50L IXZ2210N50L P 470 940 W DC T = 25C, Derate 6.0W/C above c P 235 470 W DHS 25C T = 25C P c 10 10 W DAMB R 0.32 0.16 C/W thJC R 0.57 0.29 C/W thJHS Features min. typ. max. Isolated Substrate V = 0 V, I = 4 ma V GS D 500 V high isolation voltage (>2500V) DSS excellent thermal transfer V = V , I = 250 DS GS D V 3.5 4.95 6.5 V GS(th) Increased temperature and power V = 20 V , V = 0 cycling capability GS DC DS I 100 nA GSS TM IXYS RF Low Capacitance Z-MOS V = 0.8V T = 25C DS DSS J I 50 DSS A Process V =0 T =125C GS J 1 mA Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other V = 20 V, I = 0.5I R GS D D25 1.0 DS(on) hazardous materials Pulse test, t 300S, duty cycle d 2% Advantages V = 50 V, I = 0.5I , pulse test DS D D25 g 3.8 S fs High Performance RF Package T -55 +175 C J Easy to mountno insulators needed T +175 C JM (1) Thermal specifications are for the pack- T -55 + 175 C stg age, not per transistor 1.6mm(0.063 in) from case for 10 s T 300 C L Weight 4 g IXZ210N50L & IXZ2210N50L RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. C 560 622 690 pF iss V = 0 V, V = 0.8 V , GS DS DSS(MAX) C 50 77 150 pF oss f = 1 MHz C 10 12 13 pF rss Back Metal to any Pin C 21 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 3 ns on I = 0.5 I D DM R = 1 (External) T G 4 ns d(off) T 5 ns off VHF COMMUNICATIONS min. typ. max. Gps VDD= 50V, Pout=200W, f=175MHz 13 16 db Drain Efficiency VDD= 50V, Pout=200W, f=175MHz 50 60 % Load Mismatch VDD= 150V, Pout=300W, f=175MHz TBD 3T MRI min. typ. max. Gps(1) VDD=150V, P =475W, F=128MHz 12 13 db OUT Drain Efficiency VDD= 50V, Pout=200W, f=175MHz 60 65 % Zin= 0.59-J0.90 Zout= 5.86+J9.34 (1) - As measured under pulsed conditions (5 ms, 5%) with a gated Bias in Class AB, at P1dB.