X-On Electronics has gained recognition as a prominent supplier of IXZR08N120A MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXZR08N120A MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXZR08N120A IXYS

IXZR08N120A electronic component of IXYS
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See Product Specifications
Part No.IXZR08N120A
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET, N, RF, ISOPLUS247
Datasheet: IXZR08N120A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 98.8912 ea
Line Total: USD 98.89 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 98.8912
5 : USD 79.7638
10 : USD 66.4755
50 : USD 56.221

   
Manufacturer
Product Category
Transistor Polarity
Drain Source Voltage Vds
Continuous Drain Current Id
Power Dissipation Pd
Operating Frequency Min
Operating Frequency Max
Rf Transistor Case
No Of Pins
Operating Temperature Max
Msl
Svhc
Capacitance Ciss Typ
On Resistance Rdson
Operating Temperature Min
Operating Temperature Range
Power Dissipation Max
Rise Time
Termination Type
Threshold Voltage Vgs
Transistor Case Style
Transistor Type
Voltage Vds Typ
Voltage Vgs Rds On Measurement
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We are delighted to provide the IXZR08N120A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXZR08N120A and other electronic components in the MOSFETs category and beyond.

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120 = G D S 120A = G S D 120B = D S G IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process TM V = 1200 V DSS Optimized for RF Operation Ideal for Class C, D, & E Applications I = 8.0 A D25 R = Symbol Test Conditions Maximum Rat- 2.1 DS(on) ings P = TBD W DC T = 25C to 150C J V 1200 V DSS T = 25C to 150C R = 1 M V J GS 1200 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c 8 A I D25 T = 25C, pulse width limited by T c JM 40 A I DM T = 25C c 8 A I AR T = 25C c E TBD mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns TBD W P DC T = 25C, Derate 4.4W/C above 25C c P TBD W DHS T = 25C c 3.0 W P DAMB TBD C/W R thJC R TBD C/W thJHS Features Isolated Substrate high isolation voltage (>2500V) min. typ. max. excellent thermal transfer Increased temperature and power V = 0 V, I = 4 ma GS D V 1200 V DSS cycling capability V = V , I = 250 V DS GS D 3.5 6.5 V IXYS advanced Z-MOS process GS(th) Low gate charge and capacitances V = 20 V , V = 0 GS DC DS I 100 nA GSS easier to drive V = 0.8V T = 25C DS DSS J 50 faster switching I A DSS V =0 T =125C GS J 1 mA Low R DS(on) Very low insertion inductance (<2nH) V = 20 V, I = 0.5I GS D D25 R 2.1 DS(on) No beryllium oxide (BeO) or other Pulse test, t 300S, duty cycle d 2% hazardous materials V = 50 V, I = 0.5I , pulse test DS D D25 10.1 S g fs Advantages TM T -55 +175 C J High Performance RF Z-MOS Optimized for RF and high speed T 175 C JM Common Source RF Package -55 + 175 C A = Gate Source Drain T stg B = Drain Source Gate 1.6mm(0.063 in) from case for 10 s 300 C T L Easy to mountno insulators needed Weight 3.5 g IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. 1 R G 1960 pF C iss V = 0 V, V = 0.8 V , GS DS DSS(max) 59 pF C oss f = 1 MHz 9.2 pF C rss Back Metal to any Pin C 33 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS 5 ns T on I = 0.5 I D DM R = 1 (External) T 4 ns d(off) G 120 : 1=G, 2=D,3=S T 6 ns off 120A: 1=G, 2=S, 3= D 1 2 3 120B: 1=D, 2=S, 3=G Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS 8 I S Repetitive pulse width limited by I 48 A SM T JM I I V =0 V, Pulse test, t F= s, GS V 1.5 V SD 300s, duty cycle 2% T TBD ns rr IXYS RF reserves the right to chang IXYS RF reserves the right to change limlimits, tesits, tetst conditions and dim conditions and dimeensions. nsions. IXYS RF MOSFETS are covered byIXYS RF MOSFETS are covered by one or one or more ofmore of the the ffoollowing U.S. patents: llowing U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002 6,731,002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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