120 = G D S 120A = G S D 120B = D S G IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process TM V = 1200 V DSS Optimized for RF Operation Ideal for Class C, D, & E Applications I = 8.0 A D25 R = Symbol Test Conditions Maximum Rat- 2.1 DS(on) ings P = TBD W DC T = 25C to 150C J V 1200 V DSS T = 25C to 150C R = 1 M V J GS 1200 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c 8 A I D25 T = 25C, pulse width limited by T c JM 40 A I DM T = 25C c 8 A I AR T = 25C c E TBD mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns TBD W P DC T = 25C, Derate 4.4W/C above 25C c P TBD W DHS T = 25C c 3.0 W P DAMB TBD C/W R thJC R TBD C/W thJHS Features Isolated Substrate high isolation voltage (>2500V) min. typ. max. excellent thermal transfer Increased temperature and power V = 0 V, I = 4 ma GS D V 1200 V DSS cycling capability V = V , I = 250 V DS GS D 3.5 6.5 V IXYS advanced Z-MOS process GS(th) Low gate charge and capacitances V = 20 V , V = 0 GS DC DS I 100 nA GSS easier to drive V = 0.8V T = 25C DS DSS J 50 faster switching I A DSS V =0 T =125C GS J 1 mA Low R DS(on) Very low insertion inductance (<2nH) V = 20 V, I = 0.5I GS D D25 R 2.1 DS(on) No beryllium oxide (BeO) or other Pulse test, t 300S, duty cycle d 2% hazardous materials V = 50 V, I = 0.5I , pulse test DS D D25 10.1 S g fs Advantages TM T -55 +175 C J High Performance RF Z-MOS Optimized for RF and high speed T 175 C JM Common Source RF Package -55 + 175 C A = Gate Source Drain T stg B = Drain Source Gate 1.6mm(0.063 in) from case for 10 s 300 C T L Easy to mountno insulators needed Weight 3.5 g IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. 1 R G 1960 pF C iss V = 0 V, V = 0.8 V , GS DS DSS(max) 59 pF C oss f = 1 MHz 9.2 pF C rss Back Metal to any Pin C 33 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS 5 ns T on I = 0.5 I D DM R = 1 (External) T 4 ns d(off) G 120 : 1=G, 2=D,3=S T 6 ns off 120A: 1=G, 2=S, 3= D 1 2 3 120B: 1=D, 2=S, 3=G Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS 8 I S Repetitive pulse width limited by I 48 A SM T JM I I V =0 V, Pulse test, t F= s, GS V 1.5 V SD 300s, duty cycle 2% T TBD ns rr IXYS RF reserves the right to chang IXYS RF reserves the right to change limlimits, tesits, tetst conditions and dim conditions and dimeensions. nsions. IXYS RF MOSFETS are covered byIXYS RF MOSFETS are covered by one or one or more ofmore of the the ffoollowing U.S. patents: llowing U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002 6,731,002