MKE11R600DCGFC IXYS

MKE 11R600DCGFC 1) I = 15 A D25 CoolMOS Power MOSFET V = 600 V DSS with SiC Diode R = 0.165 DS(on) max Boost topology 3 ISOPLUS i4 Electrically isolated back surface SiC 2500 V electrical isolation D 4 1 1 isolated back E72873 5 surface T 2 Features MOSFET T Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratings substrate V T = 25C 600 V DSS VJ - high power dissipation - isolated mounting surface V 20 V GS - 2500 V electrical isolation I T = 25C 15 A D25 C - low drain to tab capacitance (< 40 pF) I T = 90C 11 A 1) th D90 C Fast CoolMOS power MOSFET 4 generation E single pulse 522 mJ AS I = 7.9 A T = 25C D C - high blocking capability E repetitive 0.79 mJ AR - lowest resistance dV/dt MOSFET dV/dt ruggedness V = 0...480 V 50 V/ns DS - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance Symbol Conditions Characteristic Values due to reduced chip thickness (T = 25C, unless otherwise specified) VJ Enhanced total power density min. typ. max. SiC Boost Diode - no reverse recovery current R V = 10 V I = 12 A 150 165 mW DSon GS D V V = V I = 0.79 mA 2.5 3 3.5 V GS(th) DS GS D Applications I V = 600 V V = 0 V T = 25C 1 A DSS DS GS VJ Switched mode power supplies (SMPS) T = 125C 10 A VJ Uninterruptible power supplies (UPS) I V = 20 V V = 0 V 100 nA Power factor correction (PFC) GSS GS DS C V = 0 V V = 100 V 2000 pF iss GS DS Advantages C f = 1 MHz 100 pF oss Easy assembly: Q 40 52 nC g no screws or isolation foils required Q V = 0 to 10 V V = 400 V I = 12 A 9 nC gs GS DS D Space savings Q 13 nC gd High power density t 12 ns d(on) High reliability t 6 ns r 1) Inductive switching T = 125C CoolMOS is a trademark of VJ t 75 ns d(off) Infineon Technologies AG. V = 0/10 V V = 380 V GS DS t 4 ns f I = 12 A R = 10 W D G E 0.09 mJ on E 0.01 mJ off no reverse recovery current due to absence of minority carrier injection E mJ rec off R 1.1 K/W thJC R with heat transfer paste (IXYS test setup) 1.35 K/W thJH IXYS reserves the right to change limits, test conditions and dimensions. 20100920a 2010 IXYS All rights reserved 1 - 6MKE 11R600DCGFC MOSFET T Source-Drain Diode Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. I V = 0 V 12 A S GS V I = 12 A V = 0 V 0.9 1.2 V SD F GS t 390 ns rr Q I = 12 A -di /dt = 100 A/s V = 400 V 7.5 C RM F F R I 38 A RM SiC Boost Diode D Symbol Conditions Maximum Ratings V T = 25C to 150C 600 V RRM VJ I T = 25C 15 A F25 C I T = 90C 9.5 A F90 C Symbol Conditions Characteristic Values min. typ. max. V I = 8 A T = 25C 1.5 1.7 V F F VJ I = 8 A T = 150C 1.9 A F VJ I V = V T = 25C 1 100 A R R RRM VJ T = 150C 10 A VJ I 59 A FSM t = 10 ms (50 Hz), sine T = 25C VJ Q I = I V = 400 V T = 150C 19 nC C F Fmax R VJ 1) t di/dt = 200 A/s 10 ns C R 3.1 K/W thJC R with heat transfer paste (IXYS test setup) 4.0 K/W thJH 1) t is the time constant for the capacitive displacement current waveform C (independent from T , I and di/dt), different from t which is dependent on T , I and di/dt. J LOAD rr J LOAD No reverse recovery time constant trr due to absence of minority carrier injection Component Symbol Conditions Maximum Ratings T operating -55...+150 C VJ T storage -55...+125 C stg V I < 1 mA 50/60 Hz 2500 V~ ISOL ISOL F mounting force with clip 20...120 N C Symbol Conditions Characteristic Values min. typ. max. coupling capacity between shorted pins 40 C pF P and mounting tab in the case d , d pin - pin 1.7 mm S A d , d pin - backside metal 5.5 mm S A Weight g 9 IXYS reserves the right to change limits, test conditions and dimensions. 20100920a 2010 IXYS All rights reserved 2 - 6