X-On Electronics has gained recognition as a prominent supplier of MKE38P600LB MOSFETs across the USA, India, Europe, Australia, and various other global locations. MKE38P600LB MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MKE38P600LB IXYS

MKE38P600LB electronic component of IXYS
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Part No.MKE38P600LB
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET SMPD MOSFETs
Datasheet: MKE38P600LB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 34.5174 ea
Line Total: USD 34.52 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 34.5174
5 : USD 32.7965
10 : USD 31.931
25 : USD 29.8321
50 : USD 29.285
100 : USD 28.0317
250 : USD 26.1516
500 : USD 25.2166
1000 : USD 23.2769

0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 44.0593

   
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We are delighted to provide the MKE38P600LB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MKE38P600LB and other electronic components in the MOSFETs category and beyond.

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Isolated surface to heatsink MKE 38P600LB 1) I = 50 A D25 CoolMOS Power MOSFET V = 600 V DSS ISOPLUS - electrically isolated surface to heatsink R = 45 mW DS(on) max Surface Mount Power Device DC+ T1 G1 KS1 L T2 G2 KS2 E72873 DC- Features MOSFETs T1, T2 1) Fast CoolMOS Symbol Conditions Maximum Ratings th power MOSFET 4 generation V T = 25C to 150C 600 V DSS VJ - high blocking capability - lowest resistance V 20 V GS - avalanche rated for unclamped I T = 25C 50 A D25 C inductive switching (UIS) I T = 80C 38 A D80 C - low thermal resistance E single pulse 1950 mJ due to reduced chip thickness AS I = 11 A T = 25C D C E repetitive 3 mJ AR Package - isolated surface to heatsink dV/dt MOSFET dV/dt ruggedness V = 0...480 V 50 V/ns DS - low coupling capacity between pins and heatsink Symbol Conditions Characteristic Values - PCB space saving (T = 25C, unless otherwise specified) VJ - enlarged creepage towards heatsink min. typ. max. - application friendly pinout R I = 44 A V = 10 V 40 45 m DSon D GS - low inductive current path - high reliability V I = 3 mA V = V 2.5 3 3.5 V GS(th) D DS GS I V = V V = 0 V T = 25C 10 A DSS DS DSS GS VJ Applications T = 125C 50 A VJ Switch mode power supplies (SMPS) I V = 0 V V = 20 V 100 nA GSS DS GS Soft switching topologie C 6800 pF Resonant converter iss V = 0 V V = 100 V f = 1 MHz GS DS C 320 pF oss Q 150 190 nC g V = 400 V I = 44 A 1) DS D CoolMOS is a trademark of Q 35 nC gs V = 10 V R = 3.3 GS G Infineon Technologies AG. Q 50 nC gd t 22 ns d(on) t 10 ns r Resistive switching T = 125C VJ t 120 ns d(off) V = 380 V I = 30 A DS D t 12 ns f V = 10 V R = 3.3 GS G E 70 J on E 22 J off t 900 ns d(on) t 400 ns r t Inductive switching T = 25C ns d(off) VJ t V = 380 V I = 30 A 520 ns f DS D E V = 10 V R = 330 18 mJ on GS G E 5.2 mJ off E 0.18 mJ rec(off) R 0.4 K/W thJC R with heatsink compound IXYS test setup 0.6 K/W thJH 20130506b 2013 IXYS All rights reserved 1 - 5 L DC- DC+ nc G1 KS1 G2 nc KS2 MKE 38P600LB Source-Drain Diodes of T1/T2 Symbol Conditions Maximum Ratings I T = 25C 50 A S25 C I T = 80C 38 A S80 C Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. V I = 44 A V = 0 V 0.95 1.25 V SD F GS t 600 ns rr Q I = 44 A -di /dt = 100 A/s V = 400 V 17 C RM F F R I 60 A RM Component Symbol Conditions Maximum Ratings T -55...+150 C VJ T -55...+125 C stg V I < 1 mA 50/60 Hz 2500 V~ ISOL ISOL F mounting force 40 ... 130 N C Symbol Conditions Characteristic Values min. typ. max. C coupling capacity between shorted 90 pF P pins and backside metal 1.65 d d pin - pin mm S, A 4 d d pin - backside metal mm S, A CTI 400 Weight 8 g Delivering Base Ordering Ordering Part Name Marking on Product Mode Qty Code Standard MKE38P600LB-TRR MKE38P600LB Tape&Reel 200 510486 MKE38P600LB MKE38P600LB Blister 45 480601 20130506b 2013 IXYS All rights reserved 2 - 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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