Preliminary Technical Information TM TM GigaMOS Trench V = 200V MMIX1F230N20T DSS TM HiperFET I = 156A D25 Power MOSFET R 8.3m DS(on) t 200ns rr (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab V T = 25 C to 175 C 200 V DSS J V T = 25 C to 175 C, R = 1M 200 V D DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 156 A S D25 C I T = 25 C, Pulse Width Limited by T 630 A DM C JM G I T = 25 C 100 A A C G = Gate D = Drain E T = 25 C5J AS C S = Source P T = 25 C 600 W D C dv/dt I I , V V , T 175 C 20 V/ns S DM DD DSS J Features T -55 ... +175 C J T 175 C JM Silicon Chip on Direct-Copper Bond T -55 ... +175 C stg (DCB) Substrate Isolated Substrate T 1.6mm (0.062 in.) from Case for 10s 300 C L - Excellent Thermal Transfer T Plastic Body for 10s 260 C SOLD - Increased Temperature and Power V 50/60 Hz, 1 Minute 2500 V~ ISOL Cycling Capability - High Isolation Voltage (2500V~) F Mounting Force 50..200 / 11..45 N/lb. C 175C Operating Temperature Weight 8 g Very High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Very Low R DS(on) Symbol Test Conditions Characteristic Values Advantages (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 200 V Easy to Mount DSS GS D Space Savings V V = V , I = 8mA 3.0 5.0 V GS(th) DS GS D High Power Density I V = 20V, V = 0V 200 nA GSS GS DS Applications I V = V , V = 0V 50 A DSS DS DSS GS Note 2, T = 150C 3 mA DC-DC Converters and Off-Line UPS J Primary-Side Switch R V = 10V, I = 60A, Note 1 8.3 m DS(on) GS D High Speed Power Switching Applications 2014 IXYS CORPORATION, All Rights Reserved DS100433A(04/14)MMIX1F230N20T Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 90 150 S fs DS D C 24 nF iss C V = 0V, V = 25V, f = 1MHz 2440 pF oss GS DS C 60 pF rss R Gate Input Resistance 1.15 Gi t 58 ns d(on) Resistive Switching Times t 38 ns r V = 10V, V = 0.5 V , I = I = 0.5 I GS DS DSS D D D25 t 62 ns d(off) R = 1 (External) G t 17 ns f Q 358 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 138 nC gs GS DS DSS D D25 Q 60 nC gd R 0.25C/W thJC R 0.15C/W thCS R 30C/W thJA Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 230 A S GS I Repetitive, Pulse Width Limited by T 920 A SM JM V I = 60A, V = 0V, Note 1 1.3 V SD F GS t 200 ns I = 115A, V = 0V rr F GS Q 0.74 C RM -di/dt = 100A/ s I 10.6 A RM V = 75V R Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Ices measurement. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537