Preliminary Technical Information TM TM TrenchT2 GigaMOS V = 150V MMIX1F360N15T2 DSS TM HiperFET I = 235A D25 Power MOSFET R 4.4m DS(on) t 150ns rr (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab V T = 25C to 175C 150 V DSS J D V T = 25C to 175C, R = 1M 150 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 235 A S D25 C I T = 25C, Pulse Width Limited by T 900 A DM C JM G I T = 25C 180 A A C G = Gate D = Drain E T = 25C3J AS C S = Source P T = 25C 680 W D C dv/dt I I , V V , T 175C 20 V/ns S DM DD DSS J Features T -55 ... +175 C J T 175 C z JM Silicon Chip on Direct-Copper Bond T -55 ... +175 C stg (DCB) Substrate z Isolated Substrate T 1.6mm (0.062 in.) from Case for 10s 300 C L - Excellent Thermal Transfer T Plastic Body for 10s 260 C SOLD - Increased Temperature and Power V 50/60 Hz, 1 Minute 2500 V~ ISOL Cycling Capability - High Isolation Voltage (2500V~) F Mounting Force 50..200 / 11..45 N/lb. C z 175C Operating Temperature Weight 8 g z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Very Low R DS(on) Symbol Test Conditions Characteristic Values Advantages (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 150 V z DSS GS D Easy to Mount z Space Savings V V = V , I = 8mA 2.5 5.0 V GS(th) DS GS D z High Power Density I V = 20V, V = 0V 200 nA GSS GS DS Applications I V = V , V = 0V 50 A DSS DS DSS GS Note 2, T = 150C 5 mA z J DC-DC Converters and Off-Line UPS z Primary-Side Switch R V = 10V, I = 100A, Note 1 4.4 m DS(on) GS D z High Speed Power Switching Applications 2012 IXYS CORPORATION, All Rights Reserved DS100434A(03/12)MMIX1F360N15T2 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 140 230 S fs DS D C 47.5 nF iss C V = 0V, V = 25V, f = 1MHz 3060 pF oss GS DS C 665 pF rss R Gate Input Resistance 2.7 GI t 50 ns d(on) Resistive Switching Times t 170 ns r V = 10V, V = 0.5 V , I = 100A GS DS DSS D t 115 ns d(off) R = 1 (External) G t 265 ns f Q 715 nC g(on) Q V = 10V, V = 0.5 V , I = 180A 185 nC gs GS DS DSS D Q 200 nC gd R 0.22 C/W thJC R 0.05 C/W thCS R 30 C/W thJA Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 360 A S GS I Repetitive, Pulse Width Limited by T 1440 A SM JM V I = 60A, V = 0V, Note 1 1.2 V SD F GS t 150 ns rr I = 160A, V = 0V F GS I 9 A RM -di/dt = 100A/s Q 500 nC RM V = 60V R Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Ices measurement. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537