Advance Technical Information TM TM GigaMOS Trench V = 100V MMIX1F420N10T DSS TM HiperFET I = 334A D25 Power MOSFET R 2.6m DS(on) T 140ns rr (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings V T = 25C to 175C 100 V Isolated Tab DSS J V T = 25C to 175C, R = 1M 100 V DGR J GS D V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 334 A D25 C S I T = 25C, Pulse Width Limited by T 1000 A DM C JM I T = 25C 200 A G A C E T = 25C5J AS C G = Gate D = Drain P T = 25C 680 W S = Source D C dv/dt I I , V V , T 175C 20 V/ns S DM DD DSS J T -55 ... +175 C Features J T 175 C JM z T -55 ... +175 C Silicon Chip on Direct-Copper Bond stg (DCB) Substrate T 1.6mm (0.062 in.) from Case for 10s 300 C L z Isolated Substrate T Plastic Body for 10s 260 C SOLD - Excellent Thermal Transfer V 50/60 Hz, 1 Minute 2500 V~ - Increased Temperature and Power ISOL Cycling Capability F Mounting Force 50..200 / 11..45 N/lb. C - High Isolation Voltage (2500V~) z Weight 8 g 175C Operating Temperature z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Very Low R DS(on) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Advantages BV V = 0V, I = 3mA 100 V DSS GS D z Easy to Mount V V = V , I = 8mA 2.5 5.0 V z GS(th) DS GS D Space Savings z High Power Density I V = 20V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 50 A Applications DSS DS DSS GS T = 150C 5 mA J z DC-DC Converters and Off-Line UPS R V = 10V, I = 60A, Note 1 2.6 m z DS(on) GS D Primary-Side Switch z High Speed Power Switching Applications 2012 IXYS CORPORATION, All Rights Reserved DS100410(01/12)MMIX1F420N10T Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 110 185 S fs DS D C 47 nF iss C V = 0V, V = 25V, f = 1MHz 4390 pF oss GS DS C 530 pF rss R Gate Input Resistance 1.46 GI t 47 ns d(on) Resistive Switching Times t 155 ns r V = 10V, V = 0.5 V , I = 100A GS DS DSS D t 115 ns d(off) R = 1 (External) G t 255 ns f Q 670 nC g(on) Q V = 10V, V = 0.5 V , I = 210A 170 nC gs GS DS DSS D Q 195 nC gd R 0.22 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 420 A S GS I Repetitive, Pulse Width Limited by T 1680 A SM JM V I = 60A, V = 0V, Note 1 1.2 V SD F GS t 140 ns I = 150A, V = 0V rr F GS I 7 A RM -di/dt = 100A/s Q 380 nC RM V = 60V R Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537