X-On Electronics has gained recognition as a prominent supplier of MUBW50-06A8 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MUBW50-06A8 Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

MUBW50-06A8 IXYS

MUBW50-06A8 electronic component of IXYS
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Part No.MUBW50-06A8
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: IXYS Discrete Semiconductor Modules 50 Amps 600V
Datasheet: MUBW50-06A8 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 90.6718
5 : USD 87.9315
10 : USD 85.1785
25 : USD 83.6307
50 : USD 80.8143
100 : USD 80.7381
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 75.852
N/A

Obsolete
   
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Product Category
RoHS - XON
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Vr - Reverse Voltage
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Minimum Operating Temperature
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We are delighted to provide the MUBW50-06A8 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MUBW50-06A8 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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MUBW 50-06 A8 Converter - Brake - Inverter Module (CBI3) 21 22 T1 D1 T5 D7 T3 D5 D3 D11 D13 D15 16 20 18 7 15 19 17 1 23 4 6 5 T7 T2 T4 T6 D2 D4 D6 D14 D16 E72873 D12 See outline drawing for pin arrangement 11 14 12 13 10 23 24 8 NTC 9 Three Phase Brake Chopper Three Phase Rectifier Inverter V = 1600 V V = 600 V V = 600 V RRM CES CES I = 60 A I = 35 A I = 75 A FAVM C25 C25 I = 500 A V = 2.1 V V = 1.9 V FSM CE(sat) CE(sat) Application: AC motor drives with Input Rectifier D11 - D16 Input from single or three phase grid Symbol Conditions Maximum Ratings Three phase synchronous or asynchronous motor V 1600 V RRM electric braking operation I T = 80C sine 180 42 A FAV C Features I T = 80C rectangular d = 1/3 bridge 120 A DAVM C I T = 25C t = 10 ms sine 50 Hz 500 A FSM VJ High level of integration - only one power semiconductor module required for the P T = 25C 120 W tot C whole drive NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness Symbol Conditions Characteristic Values Epitaxial free wheeling diodes with (T = 25C, unless otherwise specified) VJ Hiperfast and soft reverse recovery min. typ. max. Industry standard package with insulated copper base plate and soldering pins for V I = 50 A T = 25C 1.2 1.4 V VJ F F PCB mounting T = 125C 1.2 V VJ Temperature sense included I V = V T = 25C 0.02 mA VJ R R RRM T = 125C 0.6 mA VJ R (per diode) 1.06 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 20070921a 2007 IXYS All rights reserved 1 - 8 PHASE-OUTMUBW 50-06 A8 Output Inverter T1 - T6 Symbol Conditions Maximum Ratings V T = 25C to 150C 600 V CES VJ V Continuous 20 V GES I T = 25C 75 A C25 C I T = 80C 50 A C80 C RBSOA V = 15 V R = 22 T = 125C I = 100 A GE VJ CM G Clamped inductive load L = 100 H V V CEK CES t V = V V = 15 V R = 22 T = 125C 10 s GE VJ SC CE CES G (SCSOA) non-repetitive P T = 25C 250 W tot C Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. V I = 50 A V = 15 V T = 25C 1.9 2.3 V VJ CE(sat) C GE T = 125C 2.1 V VJ V I = 1 mA V = V 4.5 6.5 V GE(th) C GE CE I V = V V = 0 V T = 25C 0.8 mA VJ CES CE CES GE T = 125C 0.7 mA VJ I V = 0 V V = 20 V 200 nA GES CE GE t 50 ns d(on) t 60 ns r Inductive load, T = 125C VJ t 300 ns d(off) V = 300 V I = 50 A CE C t 30 ns f V = 15 V R = 22 GE G E 2.3 mJ on E 1.7 mJ off C V = 25 V V = 0 V f = 1 MHz 2.8 nF ies CE GE Q V = 300V V = 15 V I = 50 A 120 nC Gon CE GE C R (per IGBT) 0.5 K/W thJC Output Inverter D1 - D6 Symbol Conditions Maximum Ratings I T = 25C 72 A F25 C I T = 80C 45 A F80 C Symbol Conditions Characteristic Values min. typ. max. V I = 50 A V = 0 V T = 25C 1.5 1.7 V VJ F F GE T = 125C 1.3 V VJ I I = 30 A di /dt = -500 A/s T = 125C 25 A VJ RM F F t V = 300 V V = 0 V 90 ns rr R GE R (per diode) 1.19 K/W thJC 20070921a 2007 IXYS All rights reserved 2 - 8 PHASE-OUT

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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