X-On Electronics has gained recognition as a prominent supplier of IRF830PBF MOSFET across the USA, India, Europe, Australia, and various other global locations. IRF830PBF MOSFET are a product manufactured by JSMSEMI. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRF830PBF JSMSEMI

IRF830PBF electronic component of JSMSEMI
Images are for reference only
See Product Specifications
Part No.IRF830PBF
Manufacturer: JSMSEMI
Category: MOSFET
Description: 550V 4A 33W 2.2Ω@10V,2A 4V@250uA 10pF@25V N Channel 560pF@25V 12nC@10V +150℃@(Tj) TO-220AB MOSFETs ROHS
Datasheet: IRF830PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3544 ea
Line Total: USD 1.77

Availability - 455
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
441
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 5
Multiples : 5
5 : USD 0.3535
50 : USD 0.2477
150 : USD 0.2224
500 : USD 0.1906
2000 : USD 0.1766
5000 : USD 0.1681

   
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
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We are delighted to provide the IRF830PBF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF830PBF and other electronic components in the MOSFET category and beyond.

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The IRF830PBF MOSFET manufactured by JSMSEMI is an N-channel, TO-220AB package MOSFET with a rated operating voltage of 550V and a rated current of 4A. It has a total power dissipation of 33W with a channel resistance of 2.2O@10V, and a source-drain diode forward voltage of 4V@250uA. Other electrical performance characteristics include a Gate-Source capacitance of 10pF@25V, a Gate-Drain capacitance of 560pF@25V, and an output capacitance of 12nC@10V. The device is ROHS compliant and is capable of operation up to an absolute maximum temperature of +150? (Tj).

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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