X-On Electronics has gained recognition as a prominent supplier of IRF830PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF830PBF MOSFETs are a product manufactured by JSMSEMI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF830PBF JSMSEMI

Name: IRF830PBF
Brand: JSMSEMI
SKU: IRF830PBF_JSMSEMI
Availability: InStock
Rating: 5 (11 reviews)

IRF830PBF electronic component of JSMSEMI

Images are for reference only
See Product Specifications

Part No.	IRF830PBF
Manufacturer:	JSMSEMI
Category:	MOSFETs
Description:	550V 4A 33W 2.2Ω@10V,2A 4V@250uA 10pF@25V N Channel 560pF@25V 12nC@10V +150℃@(Tj) TO-220AB MOSFETs ROHS
Datasheet:	IRF830PBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.3566 ea
Line Total: USD 1.78

Availability - 140
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 5 Multiples: 5
Pack Size: 5

IRF830PBF More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

140

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 5
Multiples : 5

5 : USD 0.3566
50 : USD 0.2488
150 : USD 0.223
500 : USD 0.1906
2000 : USD 0.1763
5000 : USD 0.1676

Specifications

Manufacturer
JSMSEMI JSMSEMI

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Drain Source Voltage Vdss
550 V 550 V

Continuous Drain Current Id
4 A 4 A

Power Dissipation Pd
33 W 33 W

Drain Source On Resistance Rdson@Vgs Id
2.2 Ohms @10V , 2A 2.2 Ohms @10V , 2A

Gate Threshold Voltage Vgsth@Id
4 V @250uA 4 V @250uA

Reverse Transfer Capacitance Crss@Vds
10 pF @25V 10 pF @25V

Type
N Channel N Channel

Input Capacitance Ciss@Vds
560 pF @25V 560 pF @25V

Total Gate Charge Qg@Vgs
12 nC @10V 12 nC @10V

Operating Temperature
+ 150 C @ (Tj) + 150 C @ (Tj)

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We are delighted to provide the IRF830PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF830PBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IRF830PBF MOSFET manufactured by JSMSEMI is an N-channel, TO-220AB package MOSFET with a rated operating voltage of 550V and a rated current of 4A. It has a total power dissipation of 33W with a channel resistance of 2.2O@10V, and a source-drain diode forward voltage of 4V@250uA. Other electrical performance characteristics include a Gate-Source capacitance of 10pF@25V, a Gate-Drain capacitance of 560pF@25V, and an output capacitance of 12nC@10V. The device is ROHS compliant and is capable of operation up to an absolute maximum temperature of +150? (Tj).

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
140 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 5 Multiples : 5	5 : USD 0.3566 50 : USD 0.2488 150 : USD 0.223 500 : USD 0.1906 2000 : USD 0.1763 5000 : USD 0.1676

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