X-On Electronics has gained recognition as a prominent supplier of KVR13S9S6/2 DRAM across the USA, India, Europe, Australia, and various other global locations. KVR13S9S6/2 DRAM are a product manufactured by Kingston. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

KVR13S9S6/2 Kingston

KVR13S9S6/2 electronic component of Kingston
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See Product Specifications
Part No.KVR13S9S6/2
Manufacturer: Kingston
Category: DRAM
Description: DRAM Module DDR3 SDRAM 2Gbyte 204SODIMM
Datasheet: KVR13S9S6/2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 39.507 ea
Line Total: USD 79.01 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2
Multiples : 1
2 : USD 39.507
10 : USD 37.569

   
Manufacturer
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We are delighted to provide the KVR13S9S6/2 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KVR13S9S6/2 and other electronic components in the DRAM category and beyond.

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Memory Module Speci cations KVR13S9S6/2 2GB 1Rx16 256M x 64-Bit PC3-10600 CL9 204-Pin SODIMM DESCRIPTION SPECIFICATIONS This document describes ValueRAM s 256M x 64-bit (2GB) CL(IDD) 9 cycles DDR3-1333 CL9 SDRAM (Synchronous DRAM) 1Rx16, memory Row Cycle Time (tRCmin) 49.125ns (min.) module, based on four 256M x 16-bit FBGA components. The Refresh to Active/Refresh 260ns (min.) SPD is programmed to JEDEC standard latency DDR3-1333 Command Time (tRFCmin) timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold Row Active Time (tRASmin) 36ns (min.) contact fingers. The electrical and mechanical specifications Maximum Operating Power 1.050 W* are as follows: UL Rating 94 V - 0 o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C FEATURES *Power will vary depending on the SDRAM used. JEDEC standard 1.5V (1.425V ~1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB : Height 1.180 (30.00mm), single sided component Continued >> Document No. VALUERAM1371-001.A00 11/12/13 Page 1MODULE DIMENSIONS: Document No. VALUERAM1371-001.A00 Page 2

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Kingston Technology
KINGSTON TECHNOLOGY COMPANY
KNG
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