X-On Electronics has gained recognition as a prominent supplier of KBT5551C Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. KBT5551C Bipolar Transistors - BJT are a product manufactured by Kodenshi. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

KBT5551C Kodenshi

Name: KBT5551C
Brand: Kodenshi
SKU: KBT5551C_Kodenshi
Availability: InStock
Rating: 5 (11 reviews)

KBT5551C electronic component of Kodenshi

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See Product Specifications

Part No.	KBT5551C
Manufacturer:	Kodenshi
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 600mA 160V SOT-23 RoHS
Datasheet:	KBT5551C Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.0076 ea
Line Total: USD 0.01

Availability - 6
Ship by Tue. 07 Jan to Fri. 10 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

KBT5551C More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

6

Ship by Tue. 07 Jan to Fri. 10 Jan

MOQ : 1
Multiples : 1

1 : USD 0.0076
10 : USD 0.0062
60 : USD 0.0047
120 : USD 0.0043
480 : USD 0.0038
1020 : USD 0.0037

Specifications

Manufacturer
Kodenshi Kodenshi

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs
y y

Package
SOT - 23 SOT - 23

Brand Category
Kodenshi Kodenshi

Transistor Type
npn npn

Current - Collector Ic Max
600 mA 600 mA

Voltage - Collector Emitter Breakdown Max
160 V 160 V

Power - Max
200 mW 200 mW

Collector Cut-Off Current Icbo
50 nA 50 nA

Collector-Emitter Breakdown Voltage Vceo
160 V 160 V

Power Dissipation Pd
200 mW 200 mW

Collector Current Ic
600 mA 600 mA

Dc Current Gain Hfe@Ic Vce
80@10 mA , 5V 80@10 mA , 5V

Transition Frequency Ft
100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
500 mV @50 mA , 5 mA 500 mV @50 mA , 5 mA

Operating Temperature
+ 150 C @ (Tj) + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

KBT5551C Alternative Parts

We are delighted to provide the KBT5551C from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KBT5551C and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The KBT5551C NPN transistor is a surface-mount device manufactured by Kodenshi. It is a RoHS-compliant, SOT-23 device with an average current gain of 600. It has a maximum voltage rating of 160V and operates over a temperature range of -55°C to 150°C. This transistor is suitable for switching, amplifying, and driving applications. It is widely used in automotive audio applications, consumer electronics, and telecommunications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Kodenshi may also be referenced as

Kodenshi AUK

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Availability	Price	Buy Price	Quantity
6 Ship by Tue. 07 Jan to Fri. 10 Jan MOQ : 1 Multiples : 1	1 : USD 0.0076 10 : USD 0.0062 60 : USD 0.0047 120 : USD 0.0043 480 : USD 0.0038 1020 : USD 0.0037

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