Power Module 600V 100A IGBT Module RoHS MG06100S-BR1MM Features Ultra Low Loss Positive Temperature Coefficient High R uggedness W ith Fast Free-Wheeling High Short Circuit Diodes Capability Applications Inverter SMPS and UPS Converter Induction Heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit R Per IGBT 0.2 K/W thJC Junction-to-Case Thermal Resistance R Per Inverse Diode 0.5 K/W thJCD Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M5) 2.5 5 Nm Weight 150 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage 600 V CES V Gate - Emitter Voltage 20 V GES T =25C 150 A C I DC Collector Current C T =80C 105 A C T =25C, t =1ms 300 C p I Pulsed Collector Current A Cpuls T =80C, t =1ms 210 C p P Power Dissipation Per IGBT 625 W tot T Junction Temperature Range -40 to +150 C J T Storage Temperature Range -40 to +125 C STG V Insulation Test Voltage AC, t=1min 3000 V isol Diode V Repetitive Reverse Voltage 600 V RRM T =25C 125 A C I Average Forward Current F(AV) T =80C 85 A C I RMS Forward Current 122 A F(RMS) T =45C, t=10ms, Sine 500 Non-Repetitive Surge Forward J I A FSM Current T =45C, t=8.3ms, Sine 545 J Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG06100S-BR1MM 2015 Littelfuse, Inc 1 121 Specifications are subject to change without notice. Revised:05/19/15Power Module 600V 100A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =250A 3.5 5.5 V GE(th) CE GE C I =100A, V =15V, T =25C 1.9 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =100A, V =15V, T =125C 2.1 V C GE J V =600V, V =0V, T =25C 0.5 mA CE GE J I Collector Leakage Current CES V =600V, V =0V, T =125C 3 mA CE GE J I Gate Leakage Current V =0V,V =20V -1.1 1.1 A GES CE GE Q Gate Charge V =300V, I =100A , V =15V 230 nC ge CC C GE C Input Capacitance 5.3 ies C Output Capacitance V =25V, V =0V, f =1MHz 0.52 nF oes CE GE C Reverse Transfer Capacitance 0.34 res T =25C 45 ns J t Turn - on Delay Time d(on) T =125C 50 ns J T =25C 45 ns J t Rise Time V =300V CC r T =125C 45 ns J I =100A T =25C 320 ns C J t Turn - off Delay Time d(off) T =125C 350 ns J R =10 G T =25C 35 ns J t Fall Time f T =125C 40 ns V =15V J GE T =25C 3.5 mJ J E Turn - on Energy Inductive Load on T =125C 4.5 mJ J T =25C 2.5 mJ J E Turn - off Energy off T =125C 3.5 mJ J Diode I =100A , V =0V, T =25C 1.9 2.2 V F GE J V Forward Voltage F I =100A , V =0V, T =125C 1.7 2.0 V F GE J t Reverse Recovery Time 50 ns rr I =100A , V =400V F R I Max. Reverse Recovery Current di /dt=-1000A/s 45 A RRM F T =125C Q Reverse Recovery Charge J 1.5 C rr MG06100S-BR1MM 2015 Littelfuse, Inc 2 122 Specifications are subject to change without notice. Revised:05/19/15