Power Module 600V 200A IGBT Module RoHS MG06200S-BN4MM Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery V with positive Low switching losses CE(sat) temperature coefficient Fast switching and short tail current Applications Agency Approvals High frequency Motion/servo control AGENCY AGENCY FILE NUMBER switching application UPS systems E71639 Medical applications Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit T max Max. Junction Temperature 175 C J T Operating Temperature -40 150 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 350 Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M5) 2.5 5 Nm Weight 160 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T=25C 600 V CES J V Gate - Emitter Voltage 20 V GES T =25C 300 A C I DC Collector Current C T =60C 200 A C I Repetitive Peak Collector Current t =1ms 400 A CM p P Power Dissipation Per IGBT 600 W tot Diode V Repetitive Reverse Voltage T=25C 600 V RRM J T =25C 300 A C I Average Forward Current F(AV) T =60C 200 A C I Repetitive Peak Forward Current t =1ms 400 A FRM p 2 2 I t T =125C, t=10ms, V =0V 3500 A s J R Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG06200S-BN4MM 1 2015 Littelfuse, Inc 140 Specifications are subject to change without notice. Revised:05/19/15Power Module 600V 200A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =3.2mA 4.9 5.8 6.5 V GE(th) CE GE C I =200A, V =15V, T=25C 1.45 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =200A, V =15V, T=125C 1.6 V C GE J V =600V, V =0V, T=25C 1 mA CE GE J I Collector Leakage Current CES V =600V, V =0V, T=125C 5 mA CE GE J I Gate Leakage Current V =0V,V =15V, T=125C -400 400 nA GES CE GE J R Integrated Gate Resistor 2 Gint Q Gate Charge V =300V, I =200A , V =15V 2.15 C ge CC C GE C Input Capacitance 13 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.38 nF res T =25C 150 ns J t Turn - on Delay Time d(on) T =125C 160 ns J T =25C 30 ns J V =300V t Rise Time CC r T =125C 40 ns J I =200A T =25C 340 ns C J t Turn - off Delay Time d(off) T =125C 370 ns J R =2.0 G T =25C 60 ns J t Fall Time f T =125C 70 ns V =15V J GE T =25C 1 mJ J E Turn - on Energy Inductive Load on T =125C 1.55 mJ J T =25C 5.65 mJ J E Turn - off Energy off T =125C 6.9 mJ J I Short Circuit Current t 6S , V =15V T =125C,V =360V 1000 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.25 K/W thJC Diode I =200A , V =0V, T =25C 1.55 V F GE J V Forward Voltage F I =200A , V =0V, T =125C 1.5 V F GE J I Max. Reverse Recovery Current 230 A RRM I =200A , V =300V F R Q Reverse Recovery Charge di /dt=-5700A/s 17 C rr F T =125C E Reverse Recovery Energy J 5.2 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.45 K/W thJCD MG06200S-BN4MM 2015 Littelfuse, Inc 2 141 Specifications are subject to change without notice. Revised:05/19/15