Power Module 600V IGBT Family RoHS MG06400D-BN1MM Series 400A Dual IGBT Features Ultra lo w loss Positive temperature coefficient High ruggedness High short circuit capability Applications Motor drives SMPS and UPS Inverter Welder Agency Approvals Converter Induction Heating AGENCY AGENCY FILE NUMBER E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max) -40 T Operating Temperature 150 C J op T Storage Temperature Range -40 125 C STG V Insulation Test Voltage AC, t=1min 3000 V isol Module case exposed to 0.1% ammonium CTI Comparative Tracking Index 350 V chloride solution per UL and IEC standards Junction-to-Case Thermal 0.09 R K/W Per IGBT thJC Resistance Junction-to-Case Thermal R Per Inverse Diode 0.15 K/W thJCD Resistance Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M6) 2.5 5 Nm Weight 310 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage 600 V CES V Gate - Emitter Voltage 20 V GES T =25C 460 A C I DC Collector Current C T =50C 400 A C T =25C, t =1ms 920 A C p I Pulsed Collector Current Cpuls T =50C, t =1ms 800 A C p P Power Dissipation Per IGBT 1400 W tot Free-Wheeling Diode V Repetitive Reverse Voltage 600 V RRM T =25C 400 A C I Average Forward Current F(AV) T =50C 320 A C I RMS Forward Current 570 A F(RMS) T =45C, t=10ms, Sine 1200 A Non-Repetitive Surge J I FSM Forward Current T =45C, t=8.3ms, Sine 1320 A J Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 1 2015 Littelfuse, Inc MG06400D-BN1MM Specifications are subject to change without notice. Revised:05/19/15Power Module 600V IGBT Family Electrical Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =8mA 4.5 5.5 6.5 V GE(th) CE GE C I =400A, V =15V, T =25C 1.95 2.45 V Collector - Emitter c GE J V CE(sat) Saturation Voltage I =400A, V =15V, T =125C 2.2 V C GE J V =600V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current CES V =600V, V =0V, T =125C 2 mA CE GE J I Gate Leakage Current V =0V, V =20V 1.2 1.2 A GES CE GE R Intergrated Gate Resistor 2.5 Gint Q Gate Charge V =300V, I =400A , V =15V 1.8 C ge CE C GE C Input Capacitance 18 nF ies C Output Capacitance V =25V, V =0V, f =1MHz 1.8 nF oes CE GE C Reverse Transfer Capacitance 1.6 nF res T =25C 195 ns J t Turn - on Delay Time d(on) T =125C 220 ns J T =25C 65 ns J V =300V t Rise Time r CC T =125C 80 ns J I =400A T =25C 295 ns J C t Turn - off Delay Time d(off) T =125C 350 ns J R =3 G T =25C 45 ns J t Fall Time f T =125C 60 ns V =15V J GE T =25C 6.5 mJ J E Turn - on Energy Inductive Load on T =125C 10 mJ J T =25C 9.5 mJ J E Turn - off Energy off T =125C 14.5 mJ J Free-Wheeling Diode I =400A , V =0V,T =25C 1.25 1.6 V F GE J V Forward Voltage F I =400A , V =0V, T =125C 1.2 V F GE J T Reverse Recovery Time I =400A , V =300V 249 ns rr F R I Reverse Recovery Charge d /dt=-2000A/s 214 A RRM iF Q Reverse Recovery Charge T =125C 31 C rr J 2 2015 Littelfuse, Inc MG06400D-BN1MM Specifications are subject to change without notice. Revised:05/19/15