Power Module 600V 600A IGBT Module RoHS MG06600WB-BN4MM Features High short circuit F ree wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery V with positive L ow switching losses CE(sat) temperature coefficient F ast switching and short tail current Applications High frequency switc hing Motion/servo control application supplies Medical applications UPS sy stems Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 175 C J max T Operating Temperature -40 150 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 250 Torque Module-to-Sink Recommended (M5) 2.5 5 Nm Torque Module Electrodes Recommended (M6) 3 5 Nm Weight 350 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 600 V CES J V Gate - Emitter Voltage 20 V GES T =25C 700 A C I DC Collector Current C T =50C 600 A C I Repetitive Peak Collector Current t =1ms 1200 A CM p P Power Dissipation Per IGBT 1500 W tot Diode V Repetitive Reverse Voltage T=25C 600 V RRM J T =25C 700 A C I Average Forward Current F(AV) T =50C 600 A C I Repetitive Peak Forward Current t =1ms 1200 A FRM p 2 2 I t T =125C, t=10ms, V =0V 17000 A s J R MG06600WB-BN4MM 2016 Littelfuse, Inc 1 96 Specifications are subject to change without notice. Revised:10/05/16Power Module 600V 600A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =9.6mA 4.9 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =600A, V =15V, T=25C 1.45 V C GE J V CE(sat) Saturation Voltage I =600A, V =15V, T=125C 1.6 V C GE J V =600V, V =0V, T=25C 1 mA CE GE J I Collector Leakage Current ICES V =600V, V =0V, T=125C 5 mA CE GE J I Gate Leakage Current V =0V, V =15V, T=125C -400 400 nA GES CE GE J R Integrated Gate Resistor 0.68 Gint Q Gate Charge V =300V, I =600A , V =15V 6.5 C ge CE C GE C Input Capacitance 39 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 1.15 nF res T=25C 100 ns J t Turn - on Delay Time d(on) T=125C 110 ns J T=25C 90 ns J t Rise Time r T=125C 95 ns J V =300V CC T=25C 670 ns J I =600A t Turn - off Delay Time C d(off) T=125C 710 ns J R =2.4 G T=25C 70 ns J t Fall Time V =15V f GE T=125C 75 ns J Inductive Load T=25C 8.9 mJ J E Turn - on Energy on T=125C 9.9 mJ J T=25C 21.5 mJ J E Turn - off Energy off T=125C 25 mJ J I Short Circuit Current t 6S , V =15V T =125C , V =360V 3000 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.10 K/W thJC Diode I =600A, V =0V, T =25C 1.55 V F GE J V Forward Voltage F I =600A, V =0V, T =125C 1.5 V F GE J t Reverse Recovery Time 400 ns RR I =600A, V =300V F R I Max. Reverse Recovery Current di /dt=-6000A/s 300 A RRM F T=125C E Reverse Recovery Energy J 9.3 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.16 K/W thJCD NTC Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit R Resistance T=25C 5 K 25 c B 3375 K 25/50 MG06600WB-BN4MM 2016 Littelfuse, Inc 2 97 Specifications are subject to change without notice. Revised:10/05/16