Power Module 1200V 100A IGBT Module RoHS MG12100W-XN2MM Features High le vel of integration F ree wheeling diodes with fast and soft reverse 3 IGBT CHIP(Trench+Field recovery Stop technology) Solderable pins for PCB Low saturation voltage mounting and positive temperature coefficient T emperature sense included F ast switching and short tail current Applications AC motor control In verter and power supplies Motion/servo control Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max) T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 250 M Mounting Torque Recommended (M5) 2.5 5 Nm d Weight 300 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 140 A C I DC Collector Current C T =80C 100 A C I Repetitive Peak Collector Current t =1ms 200 A CM p P Power Dissipation Per IGBT 450 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 140 A C I Average Forward Current F(AV) T =80C 100 A C I Repetitive Peak Forward Current t =1ms 200 A FRM p 2 2 I t T =125C, t=10ms, V =0V 1850 A s J R MG12100W-XN2MM 2015 Littelfuse, Inc 2331 Specifications are subject to change without notice. Revised:12/04/14Power Module 1200V 100A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =4.0mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =100A, V =15V, T =25C 1.7 V C GE J V CE(sat) Saturation Voltage I =100A, V =15V, T =125C 1.9 V C GE J V =1200V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 10 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 7.5 Gint Q Gate Charge V =600V, I =100A , V =15V 0.9 C ge CE C GE C Input Capacitance 7.1 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.3 nF RES T=25C 260 ns J t Turn - on Delay Time d(on) T =125C 290 ns J T=25C 30 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 420 ns J I =100A t Turn - off Delay Time C d(off) T =125C 520 ns J R =3.9 G T=25C 70 ns J t Fall Time V =15V f GE T =125C 90 ns J Inductive Load T=25C 7.8 mJ J E Turn - on Energy on T =125C 10 mJ J T=25C 8 mJ J E Turn - off Energy off T =125C 10 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 400 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.28 K/W thJC Diode I =100A, V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =100A, V =0V, T =125C 1.65 V F GE J t Reverse Recovery Time 320 ns RR I =100A, V =600V F R I Max. Reverse Recovery Current di /dt=2400A/s 105 A RRM F T =125C E Reverse Recovery Energy J 9.5 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.5 K/W thJCD NTC Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit R Resistance T =25C 5 K 25 c B 3375 K 25/50 MG12100W-XN2MM 2015 Littelfuse, Inc 2 234 Specifications are subject to change without notice. Revised:12/04/14