Power Module 1200V 150A IGBT Module RoHS MG12150D-BA1MM Features Ultra low loss P ositive temperature coefficient High r uggedness W ith fast free-wheeling High short circuit diodes capability Applications Inverter SMPS and UPS Converter Induction heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit R Per IGBT 0.11 K/W thJC Junction-to-Case Thermal Resistance R Per Inverse Diode 0.27 K/W thJCD Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M6) 2.5 5 Nm Weight 285 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage 1200 V CES V Gate - Emitter Voltage 20 V GES T =25C 210 A C I DC Collector Current C T =80C 150 A C T =25C, t =1ms 420 C p I Pulsed Collector Current A Cpuls T =80C, t =1ms 300 C p P Power Dissipation Per IGBT 1100 W tot T Junction Temperature Range -40 to +150 C J T Storage Temperature Range -40 to +125 C STG V Insulation Test Voltage AC, t=1min 3000 V isol Diode V Repetitive Reverse Voltage 1200 V RRM T =25C 180 A C I Average Forward Current F(AV) T =80C 120 A C I RMS Forward Current 180 A F(RMS) T =45C, t=10ms, Sine 860 Non-Repetitive Surge Forward J I A FSM Current T =45C, t=8.3ms, Sine 900 J Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12150D-BA1MM 2016 Littelfuse, Inc 89 1 Specifications are subject to change without notice. Revised:07/21/16Power Module 1200V 150A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =6mA 5.0 6.2 7.0 V GE(th) CE GE C I =150A, V =15V, T =25C 1.8 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =150A, V =15V, T =125C 2.0 V C GE J V =1200V, V =0V, T =25C 0.4 1.0 mA CE GE J I Collector Leakage Current CES V =1200V, V =0V, T =125C 4.0 mA CE GE J I Gate Leakage Current V =0V,V =20V -200 200 nA GES CE GE Q Gate Charge V =600V, I =150A , V =15V 1550 nC ge CC C GE C Input Capacitance 11 ies C Output Capacitance 0.8 V =25V, V =0V, f =1MHz nF oes CE GE C Reverse Transfer Capacitance 0.52 res T =25C 150 ns J t Turn - on Delay Time d(on) T =125C 160 ns J T =25C 65 ns J V =600V t Rise Time r CC T =125C 65 ns J I =150A T =25C 440 ns J C t Turn - off Delay Time d(off) T =125C 500 ns J R =7.5 G T =25C 55 ns J t Fall Time f T =125C 70 ns V =15V J GE T =25C 14.9 mJ J E Turn - on Energy Inductive Load on T =125C 20.6 mJ J T =25C 9.8 mJ J E Turn - off Energy off T =125C 15.6 mJ J Diode I =150A , V =0V, T =25C 2.0 2.48 V F GE J V Forward Voltage F I =150A , V =0V, T =125C 1.7 2.20 V F GE J t Reverse Recovery Time 240 ns rr I =150A , V =800V F R I Max. Reverse Recovery Current di /dt=-1000A/s 85 A RRM F T =125C Q Reverse Recovery Charge J 10.5 C rr MG12150D-BA1MM 2016 Littelfuse, Inc 2 90 Specifications are subject to change without notice. Revised:07/21/16