Power Module 1200V 200A IGBT Module RoHS MG12200D-BA1MM Features Ultra low loss Positive temperature coefficient High ruggedness W ith fast free-wheeling High short circuit diodes capability Applications Inverter SMPS and UPS Converter Induction heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit R Per IGBT 0.09 K/W thJC Junction-to-Case Thermal Resistance R Per Inverse Diode 0.22 K/W thJCD Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M6) 2.5 5 Nm Weight 285 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage 1200 V CES V Gate - Emitter Voltage 20 V GES T =25C 300 A C I DC Collector Current C T =80C 210 A C T =25C, t =1ms 600 C p I Pulsed Collector Current A Cpuls T =80C, t =1ms 420 C p P Power Dissipation Per IGBT 1400 W tot T Junction Temperature Range -40 to +150 C J T Storage Temperature Range -40 to +125 C STG V Insulation Test Voltage AC, t=1min 3000 V isol Diode V Repetitive Reverse Voltage 1200 V RRM T =25C 250 A C I Average Forward Current F(AV) T =80C 170 A C I RMS Forward Current 250 A F(RMS) T =45C, t=10ms, Sine 1860 Non-Repetitive Surge Forward J I A FSM Current T =45C, t=8.3ms, Sine 1920 J Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12200D-BA1MM 2016 Littelfuse, Inc 170 1 Specifications are subject to change without notice. Revised:07/21/16Power Module 1200V 200A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =8mA 5.0 6.2 7.0 V GE(th) CE GE C I =200A, V =15V, T =25C 1.8 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =200A, V =15V, T =125C 2.0 V C GE J V =1200V, V =0V, T =25C 0.4 1.0 mA CE GE J I Collector Leakage Current CES V =1200V, V =0V, T =125C 6.0 mA CE GE J I Gate Leakage Current V =0V,V =20V -400 400 nA GES CE GE Q Gate Charge V =600V, I =200A , V =15V 2100 nC ge CC C GE C Input Capacitance 14.9 ies C Output Capacitance 1.04 V =25V, V =0V, f =1MHz nF oes CE GE C Reverse Transfer Capacitance 0.7 res T =25C 125 ns J t Turn - on Delay Time d(on) T =125C 135 ns J T =25C 60 ns J V =600V t Rise Time r CC T =125C 60 ns J I =200A T =25C 420 ns J C t Turn - off Delay Time d(off) T =125C 490 ns J R =5 G T =25C 60 ns J t Fall Time f T =125C 75 ns V =15V J GE T =25C 17 mJ J E Turn - on Energy Inductive Load on T =125C 24.8 mJ J T =25C 13.6 mJ J E Turn - off Energy off T =125C 21.6 mJ J Diode I =200A , V =0V, T =25C 2.0 2.44 V F GE J V Forward Voltage F I =200A , V =0V, T =125C 1.7 2.20 V F GE J t Reverse Recovery Time 260 ns rr I =200A , V =800V F R I Max. Reverse Recovery Current di /dt=-1000A/s 110 A RRM F T =125C Q Reverse Recovery Charge J 13.5 C rr MG12200D-BA1MM 2016 Littelfuse, Inc 2 171 Specifications are subject to change without notice. Revised:07/21/16