Power Module 1200V 225A IGBT Module RoHS MG12225WB-BN2MM Features 3 IGBT CHIP(Trench+Field F ree wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short tail current Applications AC motor control Photo voltaic/Fuel cell Motion/servo control In verter and power supplies Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 250 Torque Module-to-Sink Recommended (M5) 2.5 5 Nm Torque Module Electrodes Recommended (M6) 3 5 Nm Weight 350 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 325 A C I DC Collector Current C T =80C 225 A C I Repetitive Peak Collector Current t =1ms 450 A CM p P Power Dissipation Per IGBT 1050 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 225 A C I Average Forward Current F(AV) T =80C 160 A C I Repetitive Peak Forward Current t =1ms 450 A FRM p 2 2 I t T =125C, t=10ms, V =0V 9100 A s J R MG12225WB-BN2MM 2016 Littelfuse, Inc 1 152 Specifications are subject to change without notice. Revised:10/05/16Power Module 1200V 225A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =9mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =225A, V =15V, T =25C 1.7 V C GE J V CE(sat) Saturation Voltage I =225A, V =15V, T =125C 2.0 V C GE J V =1200V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 5 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 3.3 Gint Q Gate Charge V =600V, I =225A , V =15V 2.1 C ge CE C GE C Input Capacitance 16 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.75 nF res T=25C 160 ns J t Turn - on Delay Time d(on) T =125C 170 ns J T=25C 45 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 460 ns J I =225A t Turn - off Delay Time C d(off) T =125C 530 ns J R =3.3 G T=25C 100 ns J t Fall Time V =15V f GE T =125C 150 ns J Inductive Load T=25C 9 mJ J E Turn - on Energy on T =125C 13.5 mJ J T=25C 22.5 mJ J E Turn - off Energy off T =125C 33 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 900 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.12 K/W thJC Diode I =225A, V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =225A, V =0V, T =125C 1.6 V F GE J t Reverse Recovery Time 200 ns RR I =225A, V =600V F R I Max. Reverse Recovery Current di /dt=-3600A/s 180 A RRM F T =125C E Reverse Recovery Energy J 18 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.2 K/W thJCD NTC Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit R Resistance T =25C 5 K 25 c B 3375 K 25/50 MG12225WB-BN2MM 2016 Littelfuse, Inc 2 153 Specifications are subject to change without notice. Revised:10/05/16