Power Module 1200V 25A IGBT Module RoHS MG1225H-XBN2MM Features High level of F ree wheeling diodes integrationonly one with fast and soft reverse power semiconductor recovery module required for the Industry standard package whole drive with insulated copper L ow saturation voltage base plateand soldering and positive temperature pins for PCB mounting coefficient Temperature sense F ast switching and short included tail current Applications AC motor control In verter and power supplies Motion/servo control Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 250 M Mounting Torque Recommended (M5) 2.5 5 Nm d Weight 180 g Inverter Sector Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 40 A C I DC Collector Current C T =80C 25 A C I Repetitive Peak Collector Current t =1ms 50 A CM p P Power Dissipation Per IGBT 147 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J 35 A T =25C C I Average Forward Current F(AV) T =80C 25 A C I Repetitive Peak Forward Current t =1ms 50 A FRM p 2 2 I t T =125C, t=10ms, V =0V 200 A s J R MG1225H-XBN2MM 2016 Littelfuse, Inc 1 208 Specifications are subject to change without notice. Revised:10/05/16Power Module 1200V 25A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =1mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =25A, V =15V, T =25C 1.7 V C GE J V CE(sat) Saturation Voltage I =25A, V =15V, T =125C 1.9 V C GE J V =1200V, V =0V, T =25C 0.1 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 1 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 8.0 Gint Q Gate Charge V =600V, I =25A , V =15V 0.24 C ge CE C GE C Input Capacitance 1.81 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.08 nF res T=25C 90 ns J t Turn - on Delay Time d(on) T =125C 90 ns J T=25C 30 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 420 ns J I =25A t Turn - off Delay Time C d(off) T =125C 520 ns J R =36 G T=25C 70 ns J t Fall Time V =15V f GE T =125C 90 ns J Inductive Load T=25C 2.4 mJ J E Turn - on Energy on T =125C 3.5 mJ J T=25C 1.8 mJ J E Turn - off Energy off T =125C 2.1 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 100 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.85 K/W thJC Diode I =25A, V =0V, T =25C 1.55 V F GE J V Forward Voltage F I =25A, V =0V, T =125C 1.54 V F GE J t Reverse Recovery Time 200 ns RR I =25A, V =600V F R I Max. Reverse Recovery Current di /dt=-400A/s 20 A RRM F T =125C E Reverse Recovery Energy J 1.5 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 1.4 K/W thJCD MG1225H-XBN2MM 2016 Littelfuse, Inc 2 209 Specifications are subject to change without notice. Revised:10/05/16