Power Module 1200V 300A IGBT Module RoHS MG12300D-BA1MM Features Ultra low loss Positive temperature coefficient High ruggedness W ith fast free-wheeling High short circuit diodes capability Applications Inverter SMPS and UPS Converter Induction heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit R Per IGBT 0.07 K/W thJC Junction-to-Case Thermal Resistance R Per Inverse Diode 0.15 K/W thJCD Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M6) 2.5 5 Nm Weight 285 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage 1200 V CES V Gate - Emitter Voltage 20 V GES T =25C 450 A C I DC Collector Current C T =80C 310 A C T =25C, t =1ms 900 C p I Pulsed Collector Current A Cpuls T =80C, t =1ms 620 C p P Power Dissipation Per IGBT 1800 W tot T Junction Temperature Range -40 to +150 C J T Storage Temperature Range -40 to +125 C STG V Insulation Test Voltage AC, t=1min 3000 V isol Diode V Repetitive Reverse Voltage 1200 V RRM T =25C 380 A C I Average Forward Current F(AV) T =80C 260 A C I RMS Forward Current 380 A F(RMS) T =45C, t=10ms, Sine 2260 Non-Repetitive Surge Forward J I A FSM Current T =45C, t=8.3ms, Sine 2560 J Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12300D-BA1MM 2016 Littelfuse, Inc 102 1 Specifications are subject to change without notice. Revised:07/21/16Power Module 1200V 300A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =12mA 5.0 6.2 7.0 V GE(th) CE GE C I =300A, V =15V, T =25C 1.9 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =300A, V =15V, T =125C 2.1 V C GE J V =1200V, V =0V, T =25C 0.4 2 mA CE GE J I Collector Leakage Current CES V =1200V, V =0V, T =125C 10 mA CE GE J I Gate Leakage Current V =0V,V =20V -400 400 nA GES CE GE Q Gate Charge V =600V, I =300A , V =15V 3060 nC ge CC C GE C Input Capacitance 21.2 ies C Output Capacitance 1.42 V =25V, V =0V, f =1MHz nF oes CE GE C Reverse Transfer Capacitance 0.94 res T =25C 190 ns J t Turn - on Delay Time d(on) T =125C 220 ns J T =25C 60 ns J V =600V t Rise Time CC r T =125C 60 ns J I =300A T =25C 460 ns C J t Turn - off Delay Time d(off) T =125C 530 ns J R =3.4 G T =25C 55 ns J t Fall Time f T =125C 75 ns V =15V J GE T =25C 22.4 mJ J E Turn - on Energy Inductive Load on T =125C 33.4 mJ J T =25C 19.6 mJ J E Turn - off Energy off T =125C 30.6 mJ J Diode I =300A , V =0V, T =25C 2.0 2.44 V F GE J V Forward Voltage F I =300A , V =0V, T =125C 1.7 2.20 V F GE J t Reverse Recovery Time 410 ns rr I =300A , V =800V F R I Max. Reverse Recovery Current di /dt=-1000A/s 120 A RRM F T =125C Q Reverse Recovery Charge J 25 C rr MG12300D-BA1MM 2016 Littelfuse, Inc 2 103 Specifications are subject to change without notice. Revised:07/21/16