Power Module 1200V IGBT Family RoHS MG12300D-BN2MM Series 300A Dual IGBT Features High short circuit Fast switching and short capability, self limiting tail current short circuit current Free wheeling diodes 3 IGBT CHIP(Trench+Field with fast and soft reverse Stop technology) recovery V with positive L ow switching losses CE(sat) temperature coefficient Applications Motor drives SMPS and UPS Agency Approvals Inverter Welder AGENCY AGENCY FILE NUMBER Converter Induction Heating E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max) T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol Module case exposed to 0.1% ammonium CTI Comparative Tracking Index 350 V chloride solution per UL and IEC standards Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M6) 2.5 5 Nm Weight 320 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 480 A C I DC Collector Current C T =80C 300 A C I Repetitive Peak Collector Current t =1ms 600 A CM p P Power Dissipation Per IGBT 1450 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 480 A C I Average Forward Current F(AV) T =80C 300 A C I Repetitive Peak Forward Current t =1ms 600 A FRM p 2 2 I t T =125C, t=10ms, V =0V 18000 A s J R Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12300D-BN2MM 2016 Littelfuse, Inc 1 Specifications are subject to change without notice. Revised:07/21/16Power Module 1200V IGBT Family Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =12mA 5.0 5.8 6.5 V GE(th) CE GE C I =300A, V =15V, T =25C 1.7 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =300A, V =15V, T =125C 1.9 V C GE J V =1200V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current CES V =1200V, V =0V, T =125C 5 mA CE GE J I Gate Leakage Current V =0V,V =15V, T =125C -400 400 A GES CE GE J R Intergrated Gate Resistor 2.5 Gint Q Gate Charge V =600V, I =300A , V =15V 2.8 C ge CE C GE C Input Capacitance 21 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.85 nF res T =25C 160 ns J t Turn - on Delay Time d(on) T =125C 170 ns J T =25C 40 ns J V =600V t Rise Time CC r T =125C 45 ns J I =300A T =25C 450 ns C J t Turn - off Delay Time d(off) T =125C 520 ns J R =2.4 G T =25C 100 ns J t Fall Time f V =15V T =125C 160 ns J GE T =25C 16.5 mJ J E Turn - on Energy Inductive Load on T =125C 25 mJ J T =25C 24.5 mJ J E Turn - off Energy off T =125C 37 mJ J t 10S , V =15V psc GE I Short Circuit Current 1200 A SC T =125C,V =900V J CC Junction-to-Case Thermal R 0.085 K/W thJC Resistance (Per IGBT) Diode I =300A , V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =300A , V =0V, T =125C 1.65 V F GE J I Max. Reverse Recovery Current I =300A , V =600V 270 A RRM F R Q Reverse Recovery Charge d /dt=-6000A/s 56 C rr iF E Reverse Recovery Energy T =125C 26 mJ rec J Junction-to-Case Thermal R 0.15 K/W thJCD Resistance (Per Diode) MG12300D-BN2MM 2016 Littelfuse, Inc 2 Specifications are subject to change without notice. Revised:07/21/16