Power Module 1200V 300A IGBT Module RoHS MG12300WB-BN2MM Features 3 IGBT CHIP(Trench+Field F ree wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature T emperature sense coefficient included Fast switching and short tail current Applications AC motor control Photovoltaic/Fuel cell Motion/servo control In verter and power supplies Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 210 Torque Module-to-Sink Recommended (M5) 2.5 5 Nm Torque Module Electrodes Recommended (M6) 3 5 Nm Weight 350 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 500 A C I DC Collector Current C T =80C 300 A C I Repetitive Peak Collector Current t =1ms 600 A CM p P Power Dissipation Per IGBT 1400 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 300 A C I Average Forward Current F(AV) T =80C 180 A C I Repetitive Peak Forward Current t =1ms 600 A FRM p 2 2 I t T =125C, t=10ms, V =0V 17500 A s J R MG12300WB-BN2MM 2016 Littelfuse, Inc 1 146 Specifications are subject to change without notice. Revised:10/05/16Power Module 1200V 300A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =12mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =300A, V =15V, T =25C 1.7 V C GE J V CE(sat) Saturation Voltage I =300A, V =15V, T =125C 2.0 V C GE J V =1200V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 5 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 2.5 Gint Q Gate Charge V =600V, I =300A , V =15V 2.7 C ge CE C GE C Input Capacitance 21 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 1.0 nF res T=25C 160 ns J t Turn - on Delay Time d(on) T =125C 170 ns J T=25C 45 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 460 ns J I =300A t Turn - off Delay Time C d(off) T =125C 530 ns J R =2.4 G T=25C 100 ns J t Fall Time V =15V f GE T =125C 150 ns J Inductive Load T=25C 13 mJ J E Turn - on Energy on T =125C 20 mJ J T=25C 25 mJ J E Turn - off Energy off T =125C 37 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 1200 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.09 K/W thJC Diode I =300A, V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =300A, V =0V, T =125C 1.6 V F GE J t Reverse Recovery Time 225 ns RR I =300A, V =600V F R I Max. Reverse Recovery Current di /dt=-4800A/s 255 A RRM F T =125C E Reverse Recovery Energy J 24 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.16 K/W thJCD NTC Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit R Resistance T =25C 5 K 25 c B 3375 K 25/50 MG12300WB-BN2MM 2016 Littelfuse, Inc 2 147 Specifications are subject to change without notice. Revised:10/05/16