Power Module 1200V 450A IGBT Module RoHS MG12450WB-BN2MM Features 3 IGBT CHIP(Trench+Field Free wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short tail current Applications AC motor control Photovoltaic/Fuel cell Motion/ser vo control In verter and power supplies Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 210 Torque Module-to-Sink Recommended (M5) 2.5 5 Nm Torque Module Electrodes Recommended (M6) 3 5 Nm Weight 350 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 600 A C I DC Collector Current C T =80C 450 A C I Repetitive Peak Collector Current t =1ms 900 A CM p P Power Dissipation Per IGBT 1950 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 450 A C I Average Forward Current F(AV) T =80C 350 A C I Repetitive Peak Forward Current t =1ms 900 A FRM p 2 2 I t T =125C, t=10ms, V =0V 34000 A s J R MG12450WB-BN2MM 2016 Littelfuse, Inc 1 109 Specifications are subject to change without notice. Revised:10/05/16Power Module 1200V 450A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =18mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =450A, V =15V, T =25C 1.7 V C GE J V CE(sat) Saturation Voltage I =450A, V =15V, T =125C 2.0 V C GE J V =1200V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 5 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 1.7 Gint Q Gate Charge V =600V, I =450A , V =15V 4.3 C ge CE C GE C Input Capacitance 32 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 1.5 nF res T=25C 160 ns J t Turn - on Delay Time d(on) T =125C 170 ns J T=25C 45 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 460 ns J I =450A t Turn - off Delay Time C d(off) T =125C 530 ns J R =1.6 G T=25C 100 ns J t Fall Time V =15V f GE T =125C 150 ns J Inductive Load T=25C 20 mJ J E Turn - on Energy on T =125C 31 mJ J T=25C 33 mJ J E Turn - off Energy off T =125C 55 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 1800 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.064 K/W thJC Diode I =450A, V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =450A, V =0V, T =125C 1.6 V F GE J t Reverse Recovery Time 255 ns RR I =450A, V =600V F R I Max. Reverse Recovery Current di /dt=-7200A/s 385 A RRM F T =125C E Reverse Recovery Energy J 38 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.12 K/W thJCD NTC Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit R Resistance T =25C 5 K 25 c B 3375 K 25/50 MG12450WB-BN2MM 2016 Littelfuse, Inc 2 110 Specifications are subject to change without notice. Revised:10/05/16