Power Module Power Module 1200V 50A IGBT Module RoHS MG1250W-XBN2MM Features High le vel of F ree wheeling diodes integrationonly one with fast and soft reverse power semiconductor recovery module required for the Industry standard whole drive package with insulated Low saturation voltage copper base plate and and positive temperature soldering pins for PCB coefficient mounting F ast switching and short T emperature sense tail current included Applications AC motor control In verter and power supplies Motion/servo control Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max) T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 250 M Mounting Torque Recommended (M5) 2.5 5 Nm d Weight 300 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 75 A C I DC Collector Current C T =80C 50 A C I Repetitive Peak Collector Current t =1ms 100 A CM p P Power Dissipation Per IGBT 260 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 75 A C I Average Forward Current F(AV) T =80C 50 A C I Repetitive Peak Forward Current t =1ms 100 A FRM p 2 2 I t T =125C, t=10ms, V =0V 680 A s J R MG1250W-XBN2MM 2015 Littelfuse, Inc 2471 Specifications are subject to change without notice. Revised:12/04/14Power Module Power Module 1200V 50A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =2.0mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =50A, V =15V, T =25C 1.7 V C GE J V CE(sat) Saturation Voltage I =50A, V =15V, T =125C 1.9 V C GE J V =1200V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 10 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 4.0 Gint Q Gate Charge V =600V, I =50A , V =15V 0.47 C ge CE C GE C Input Capacitance 3.6 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.16 nF RES T=25C 90 ns J t Turn - on Delay Time d(on) T =125C 90 ns J T=25C 30 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 420 ns J I =50A t Turn - off Delay Time C d(off) T =125C 520 ns J R =18 G T=25C 70 ns J t Fall Time V =15V f GE T =125C 90 ns J Inductive Load T=25C 4.9 mJ J E Turn - on Energy on T =125C 6.6 mJ J T=25C 4.0 mJ J E Turn - off Energy off T =125C 4.9 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 200 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.48 K/W thJC Diode I =50A, V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =50A, V =0V, T =125C 1.65 V F GE J t Reverse Recovery Time 275 ns RR I =50A, V =600V F R I Max. Reverse Recovery Current di /dt=1200A/s 50 A RRM F T =125C E Reverse Recovery Energy J 4.4 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.78 K/W thJCD MG1250W-XBN2MM 2015 Littelfuse, Inc 2482 Specifications are subject to change without notice. Revised:12/04/14